Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etching.

Autor: Tachi, Shin'ichi, Okudaira, Sadayuki

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1986, Vol. 4 Issue 2, p459-467, 9p

Chemical sputtering yields of silicon resulting from F+, CFn+(n= 1,2,3) ion bombardment

Autor: Miyake, Kiyoshi, Tachi, Shin’ichi, Yagi, Kunihiro, Tokuyama, Takashi

Publikováno v: Journal of Applied Physics; April 1982, Vol. 53 Issue: 4 p3214-3219, 6p

Low-energy mass-separated ion beam deposition of materials

Autor: Tokuyama, Takashi, Yagi, Kunihiro, Miyake, Kiyoshi, Tamura, Masao, Natsuaki, Nobuyoshi, Tachi, Shin'ichi

Publikováno v: In Nuclear Instruments and Methods 1981 182 Part 1:241-250

Deposition in Dry-Etching Gas Plasmas

Autor: Arai, Shin, Kazunori Tsujimoto, Kazunori Tsujimoto, Shin'ichi Tachi, Shin'ichi Tachi

Publikováno v: Japanese Journal of Applied Physics; June 1992, Vol. 31 Issue: 6 p2011-2011, 1p

Chemical and Physical Roles of Individual Reactive Ions in Si Dry Etching

Autor: Tachi, Shin'ichi, Miyake, Kiyoshi, Tokuyama, Takashi

Publikováno v: Japanese Journal of Applied Physics; January 1982, Vol. 21 Issue: 1 p141-141, 1p