Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Tabataba‐Vakili, Farsane"'
Autor:
Tabataba-Vakili, Farsane, Krelle, Lukas, Husel, Lukas, Nguyen, Huy P. G., Li, Zhijie, Bilgin, Ismail, Watanabe, Kenji, Taniguchi, Takashi, Högele, Alexander
Metasurfaces allow to manipulate light at the nanoscale. Integrating metasurfaces with transition metal dichalcogenide monolayers provides additional functionality to ultrathin optics, including tunable optical properties with enhanced light-matter i
Externí odkaz:
http://arxiv.org/abs/2402.09037
Autor:
Tabataba-Vakili, Farsane, Nguyen, Huy P. G., Rupp, Anna, Mosina, Kseniia, Papavasileiou, Anastasios, Watanabe, Kenji, Taniguchi, Takashi, Maletinsky, Patrick, Glazov, Mikhail M., Sofer, Zdenek, Baimuratov, Anvar S., Högele, Alexander
Publikováno v:
Nat. Commun. 15, 4735 (2024)
Magnetism in two-dimensional materials reveals phenomena distinct from bulk magnetic crystals, with sensitivity to charge doping and electric fields in monolayer and bilayer van der Waals magnet CrI3. Within the class of layered magnets, semiconducti
Externí odkaz:
http://arxiv.org/abs/2312.11041
Autor:
Li, Zhijie, Tabataba-Vakili, Farsane, Zhao, Shen, Rupp, Anna, Bilgin, Ismail, Herdegen, Ziria, März, Benjamin, Watanabe, Kenji, Taniguchi, Takashi, Schleder, Gabriel R., Baimuratov, Anvar S., Kaxiras, Efthimios, Müller-Caspary, Knut, Högele, Alexander
Publikováno v:
Nano Letters (2023)
Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moir\'e systems with rich correlated electron phases and moir\'e exciton phenomena. For material combinations with small lattice mismatch and twist ang
Externí odkaz:
http://arxiv.org/abs/2212.07686
Autor:
Tabataba-Vakili, Farsane, Brimont, Christelle, Alloing, Blandine, Damilano, Benjamin, Doyennette, Laetitia, Guillet, Thierry, Kurdi, Moustafa El, Chenot, Sébastien, Brändli, Virginie, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Appl. Phys. Lett. 117, 121103 (2020)
Low-threshold lasing under pulsed optical pumping is demonstrated at room temperature for III-nitride microdisks with InGaN/GaN quantum wells on Si in the blue spectral range. Thresholds in the range of 18 kW/cm2 have been achieved along with narrow
Externí odkaz:
http://arxiv.org/abs/2009.05118
Autor:
Tabataba-Vakili, Farsane, Alloing, Blandine, Damilano, Benjamin, Souissi, Hassen, Brimont, Christelle, Doyennette, Laetitia, Guillet, Thierry, Checoury, Xavier, Kurdi, Moustafa El, Chenot, Sébastien, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Opt. Lett. 45, 4276-4279 (2020)
Ultraviolet microdisk lasers are integrated monolithically into photonic circuits using a III-nitride on silicon platform with gallium nitride (GaN) as the main waveguiding layer. The photonic circuits consist of a microdisk and a pulley waveguide te
Externí odkaz:
http://arxiv.org/abs/2006.13800
Autor:
Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Checoury, Xavier, Sauvage, Sébastien, Kurdi, Moustafa El, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Sci Rep 9, 18095 (2019)
On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-
Externí odkaz:
http://arxiv.org/abs/1910.09236
Autor:
Tabataba-Vakili, Farsane, Rennesson, Stéphanie, Damilano, Benjamin, Frayssinet, Eric, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Paulillo, Bruno, Colombelli, Raffaele, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Opt. Express 27, 11800-11808 (2019)
Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silico
Externí odkaz:
http://arxiv.org/abs/1904.03101
Autor:
Tabataba-Vakili, Farsane, Doyennette, Laetitia, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Frayssinet, Eric, Damilano, Benjamin, Duboz, Jean-Yves, Semond, Fabrice, Roland, Iannis, Kurdi, Moustafa El, Checoury, Xavier, Sauvage, Sébastien, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
ACS Photonics 2018, 5, 3643-3648
The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonst
Externí odkaz:
http://arxiv.org/abs/1904.03087
Autor:
Tabataba-Vakili, Farsane, Roland, Iannis, Tran, Thi-Mo, Checoury, Xavier, Kurdi, Moustafa El, Sauvage, Sébastien, Brimont, Christelle, Guillet, Thierry, Rennesson, Stéphanie, Duboz, Jean-Yves, Semond, Fabrice, Gayral, Bruno, Boucaud, Philippe
Publikováno v:
Appl. Phys. Lett. 111, 131103 (2017)
III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantu
Externí odkaz:
http://arxiv.org/abs/1904.03055
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