Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Tabassom Tadayyon-Eslami"'
Autor:
K. Limpaphayom, Hung-Chih Kan, T. J. Garrett, S. Shah, Tabassom Tadayyon-Eslami, Raymond J. Phaneuf
Publikováno v:
Applied Physics Letters. 83:4330-4332
We describe an investigation of the lateral length scale dependence of the evolution of topographical corrugations during multilayer molecular beam epitaxial growth in the GaAs/AlAs multilayer system. By patterning the substrate at series of well-def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec04c158c5d5783c1641416a18f1d6f
https://doi.org/10.1063/1.1630170
https://doi.org/10.1063/1.1630170
Autor:
K. M. Micholsky, Tabassom Tadayyon-Eslami, Hung-Chih Kan, S. Shah, L.C. Calhoun, Raymond J. Phaneuf, R. Ankam
Publikováno v:
Physical Review B. 73
We report an extended experimental characterization of the transient evolution of the surface morphology of patterned GaAs(001) surfaces during homoepitaxial growth [Phys. Rev. Lett. 92, 146101 (2004)]. The size and the periodicity in the patterned s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1fcd4279e74bb9bdf36fe7aaa883ca
https://doi.org/10.1103/physrevb.73.195410
https://doi.org/10.1103/physrevb.73.195410
Publikováno v:
Physical review letters. 97(12)
We observe a dramatic change in the unstable growth mode during GaAs molecular beam epitaxy on patterned GaAs(001) as the temperature is lowered through approximately 540 degrees C, roughly coincident with the preroughening temperature. Observations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ae97cee240d0ca2904c30f605b5e8e2
https://pubmed.ncbi.nlm.nih.gov/17025980
https://pubmed.ncbi.nlm.nih.gov/17025980