Zobrazeno 1 - 4
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pro vyhledávání: '"Tabakman, Keith"'
Autor:
Jianwei Peng, W. Ma, Rick Carter, Manoj Joshi, Michael V. Aquilino, Tabakman Keith, L. Lee, Xin Wang, Jaeger Daniel, W. Li, Man Gu, Wang Haiting, Owen Hu
Publikováno v:
Electronics Letters. 56:514-516
Low-dielectric constant (low-k) material is critical for advanced FinFET technology parasitic capacitance reduction to enable low-power and high-performance applications. Silicon Oxycarbonnitride (SiOCN) is one of the most promising low-k materials f
Autor:
Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th
Akademický článek
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Autor:
Holt, Judson R., Harley, Eric C., Adam, Thomas N., Jeng, Jen, Tabakman, Keith, Pal, Rohit, Nayfeh, Hasan M., Black, Linda R., Kempisty, Jeremy J., Stoker, Matthew W., Dube, Abhishek, Schepis, Dominic J.
Publikováno v:
ECS Transactions; October 2008, Vol. 16 Issue: 10 p475-483, 9p