Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Ta-Shun Chou"'
Autor:
Palvan Seyidov, Joel B. Varley, Zbigniew Galazka, Ta-Shun Chou, Andreas Popp, Andreas Fiedler, Klaus Irmscher
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111109-111109-9 (2022)
Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionizati
Externí odkaz:
https://doaj.org/article/46235c0c42994bb89ea26edd9cb24222
Autor:
Ming-Hsun Lee, Ta-Shun Chou, Saud Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson
Publikováno v:
APL Materials, Vol 10, Iss 9, Pp 091105-091105-8 (2022)
Here, we investigate the effect of post-metallization anneal temperature on Ti/Au ohmic contact performance for (100)-oriented Ga2O3. A low contact resistance of ∼2.49 × 10−5 Ω·cm2 is achieved at an optimal anneal temperature of ∼420 °C for
Externí odkaz:
https://doaj.org/article/1495aa2bd6aa4f23ab5166021e76bfaf
Autor:
Kornelius Tetzner, Robert Schewski, Andreas Popp, Saud Bin Anooz, Ta-Shun Chou, Ina Ostermay, Holm Kirmse, Joachim Würfl
Publikováno v:
APL Materials, Vol 10, Iss 7, Pp 071108-071108-7 (2022)
The present work investigates the use of the refractory metal alloy TiW as a possible candidate for the realization of ohmic contacts to the ultrawide bandgap semiconductor β-Ga2O3. Ohmic contact properties were analyzed by transfer length measureme
Externí odkaz:
https://doaj.org/article/ec16b13d5d4c4bddbfc40f4df28852a7
Autor:
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth pa
Externí odkaz:
https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp
Publikováno v:
Crystals, Vol 12, Iss 1, p 8 (2021)
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (01
Externí odkaz:
https://doaj.org/article/56e9788c60c145faa93b69a1274629e3
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract In this study, the resistive switching scheme using TiO2 nanorod arrays synthesized by a large-scale and low-cost hydrothermal process was reported. Especially, the nonlinear I–V characteristics of TiO2 nanorod arrays with a nonlinearity o
Externí odkaz:
https://doaj.org/article/5a63eb92e4424ca7bacb68b435efd1fd
Autor:
Ming-Hsun Lee, Ta-Shun Chou, S. Bin Anooz, Zbigniew Galazka, Andreas Popp, Rebecca L. Peterson
Publikováno v:
ACS Nano. 16:11988-11997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8b1b4ed510ebc5c6ae897742368002
https://doi.org/10.1021/acsnano.2c01957
https://doi.org/10.1021/acsnano.2c01957
Autor:
Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt
Publikováno v:
Journal of Vacuum Science & Technology A. 41
In this work, we analyze the optimum annealing conditions for the activation of Ge-implanted β-Ga2O3 in order to reach low ohmic contact resistances. The experiments involved the use of a pulsed rapid thermal annealing treatment at temperatures betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b78f4c7df017c06fe843d7539e3f7d0
https://doi.org/10.1116/6.0002642
https://doi.org/10.1116/6.0002642
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp
Publikováno v:
Crystals, Vol 12, Iss 8, p 8 (2022)
Crystals; Volume 12; Issue 1; Pages: 8
Crystals; Volume 12; Issue 1; Pages: 8
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (01
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::843be74116bf7772d03ffac169732c75
https://www.mdpi.com/2073-4352/12/1/8
https://www.mdpi.com/2073-4352/12/1/8