Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Ta-Ko Chuang"'
Publikováno v:
MRS Proceedings. 1633:95-100
In this paper, we present fabrication and characterization of RF sputtered a-IGZO TFTs having a modified etch stopper structure with source/drain contact windows on glass wafers. The effect of annealing time and channel length on device performance i
Publikováno v:
MRS Proceedings. 1426:331-337
We have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge compositi
Publikováno v:
ECS Transactions. 33:501-507
Corning's proprietary Silicon-on-Glass (SiOG) technology comprises two major processes - the wafer bonding and the layer transfer. Both processes govern the quality of the transferred film. A strong bond between the silicon and the glass substrates i
Autor:
John W. Hartzell, Abbas Hamshidi, Jeffery A. Spirko, Miltiadis K. Hatalis, Themis Afentakis, Ta-Ko Chuang, Po-Chin Kuo, Matias N. Troccoli, Apostolos T. Voutsas
Publikováno v:
ECS Transactions. 3:237-247
This paper presents a 230 dpi Active Matrix Polymer Light Emitting Diode (AMPLED) display on flexible stainless steel substrates fabricated with laser annealed poly-silicon TFT technology. The high resolution display is based on the standard 2 TFT pi
Autor:
Themis Afentakis, Po-Chin Kuo, John W. Hartzell, Kamil Klier, Apostolos T. Voutsas, Jeffery A. Spirko, Miltiadis K. Hatalis, Matias N. Troccoli, Abbas Jamshidi Roudbari, Ta-Ko Chuang, Ivan Biaggio
Publikováno v:
ECS Transactions. 3:349-359
The first successful integration of poly-Si thin-film- transistor (poly-Si TFT) backplane with polymer light-emitting diodes (PLEDs) onto a flexible stainless-steel foil is described, and a high-resolution (230 DPI) monochrome active- matrix polymer
Publikováno v:
Solid-State Electronics. 50:1080-1087
This paper presents a study on several polysilicon TFT circuits that may be used for highly integrated electronic systems on flexible metal foils. The circuit performance presented here validates the polysilicon TFT metal foil technology as a suitabl
Publikováno v:
Colloids and Surfaces A: Physicochemical and Engineering Aspects. 164:287-295
This study investigated the inhibitory effects of tyloxapol on the albumin surface activity at the air/liquid interface. Dynamic surface tensions under constant-area and pulsating-area conditions for mixed albumin/tyloxapol solutions were measured by
Autor:
Greg J. Couillard, Pauls Stradins, Michael G. Deceglie, David L. Young, Daniel Amkreutz, Charles W. Teplin, J. H. Selj, Vincenzo LaSalvia, Ta-Ko Chuang, Benjamin Lee, Monica Chahal, Jihun Oh, Howard M. Branz, Stefan Gall, Sachit Grover, Harry A. Atwater
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We report progress made at the National Renewable Energy Laboratory (NREL) on crystal silicon solar cells fabricated by epitaxially thickening thin silicon seed layers on glass using hot-wire chemical vapor deposition. Four micron thick devices grown
Autor:
Vincenzo LaSalvia, David L. Young, Ta-Ko Chuang, J. Greg Couillard, Paul Stradins, Howard M. Branz, Sachit Grover, Charles W. Teplin
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
We report characterization of epitaxial film crystal silicon (c-Si) solar cells with open-circuit voltages (V oc ) above 560 mV. The 2-um absorber cells are grown by low-temperature (
Autor:
Kirstin Alberi, Charles W. Teplin, Maxim Shub, Howard M. Branz, Paul Stradins, Harvey Guthrey, Ta-Ko Chuang, Carolyn Beall, David L. Young, Eric J. Mozdy, Eugene Iwaniczko, Ina T. Martin, Manuel J. Romero
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
We describe recent progress in developing epitaxial film crystal silicon (c-Si) solar cells that can be grown at low temperature ( oc ∼ 570 mV, J sc ∼18 mA/cm−2) without rapid thermal anneal, defect passivation or light trapping. Unpassivated d