Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Ta-Chun Cho"'
Autor:
Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 107-113 (2023)
Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent SRAM advantages of low write power and near-infinite endurance. We propose stacking multiple 8-transistor CFET-SRAM
Externí odkaz:
https://doaj.org/article/71ecc867419a46bfb68015417da2ac79
Publikováno v:
ACS Omega, Vol 6, Iss 1, Pp 733-738 (2021)
Externí odkaz:
https://doaj.org/article/570dd8adf50b44bba2b28892bcf9274c
Autor:
Ta-Chun Cho, 卓大鈞
99
Integrated circuits materials gradually develop for SiGe alloys now,and MOSFET is an important component of integrated circuits.In this study,we research the valence band structure of strained SiGe alloys in the channel.We use k‧p method an
Integrated circuits materials gradually develop for SiGe alloys now,and MOSFET is an important component of integrated circuits.In this study,we research the valence band structure of strained SiGe alloys in the channel.We use k‧p method an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/93102278159486027587
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Ta-Chun Cho, Jing-Qiang Guo, Cheng-Jun Wu, Po-Ying Wu, Jia-Yuan Hung
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055006
In this work, a ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric HfZrOx gate dielectric is demonstrated with analog memory characteristics for the application of synaptic devices. Th
Publikováno v:
ACS Omega, Vol 6, Iss 1, Pp 733-738 (2021)
Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further impro
Autor:
M. Miura, T.-Z. Hong, C.-J. Tsai, X.-R. Yu, Y.-T. Huang, Y. Chuang, Hiroyuki Ishii, Seiji Samukawa, Chia-Min Lin, G.-L. Luo, C.-J. Su, Jiun-Yun Li, Kuo-Hsing Kao, T.-Y. Chu, Tatsuro Maeda, Po-Jung Sung, W. C.-Y. Ma, H.-Y. Chao, Ta-Chun Cho, Hisu-Chih Chen, W.-H. Chang, Guo-Wei Huang, N.-C. Lin, S.-M. Luo, Kun-Lin Lin, Jia-Min Shieh, Toshifumi Irisawa, K.-P. Huang, Fu-Kuo Hsueh, Chien-Ting Wu, Jianqing Lin, C.-Y. Yang, W.-F. Wu, S.-T. Chung, J.-H. Tarng, Tien-Sheng Chao, Ricky W. Chuang, Darsen D. Lu, Yeong-Her Wang, Yao-Jen Lee, A. Agarwal, Yiming Li, M.-J. Li, Wen-Kuan Yeh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bondin
Publikováno v:
ACS Omega
Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further impro
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:095002
Publikováno v:
BMC Surgery, Vol 23, Iss 1, Pp 1-8 (2023)
Abstract Introduction Peptic ulcers are caused by unbalanced acid production, and proton pump inhibitors (PPIs) in recent decades have helped to treat peptic ulcers effectively. Meanwhile, the incidence of perforated peptic ulcer (PPU) persists and h
Externí odkaz:
https://doaj.org/article/ee72517a77014201a6a21c30c510c61e