Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ta-Ching Tzu"'
Autor:
Junyi Gao, Ta Ching Tzu, Tasneem Fatema, Xiangwen Guo, Qianhuan Yu, Gabriele Navickaite, Michael Zervas, Michael Geiselmann, Andreas Beling
Publikováno v:
2023 Optical Fiber Communications Conference and Exhibition (OFC).
We demonstrate InGaAs/InP balanced photodiodes on Si3N4 waveguides with record-high 3-dB bandwidth of 30 GHz, 0.72 A/W responsivity, and high common mode rejection ratio (CMRR) of 26 dB at 30 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9e18e2884a6f1580ae608009b25bf9b
https://doi.org/10.23919/ofc49934.2023.10116763
https://doi.org/10.23919/ofc49934.2023.10116763
Autor:
Fengxin Yu, Ta-Ching Tzu, Junyi Gao, Tasneem Fatema, Keye Sun, Prerana Singaraju, Steven M. Bowers, Christopher Reyes, Andreas Beling
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92434f06437c296f187a4fe72cc523fb
https://doi.org/10.1109/jstqe.2022.3222987
https://doi.org/10.1109/jstqe.2022.3222987
Publikováno v:
IEEE Photonics Technology Letters. 33:832-835
Foundry-enabled Ge-on-Si waveguide (WG) photodiodes (PDs) with on-chip bias circuit are demonstrated. While a single-element PD has a 52-GHz bandwidth (BW) and a radio frequency (RF) saturation power of −11 dBm at 40 GHz, PD arrays composed of 2 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11fdb0d7d0bb75fe8bc2e60d2102b91b
https://doi.org/10.1109/lpt.2021.3064505
https://doi.org/10.1109/lpt.2021.3064505
Publikováno v:
Optics Express. 31:13084
We propose and experimentally demonstrate a low-loss, radio frequency (RF) photonic signal combiner with flat response from 1 GHz to 15 GHz and low group delay variation of 9 ps. The distributed group array photodetector combiner (GAPC) is implemente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a04eaeb6e1fd338a68293e1f36b9414d
https://doi.org/10.1364/oe.484839
https://doi.org/10.1364/oe.484839
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 25:1-11
We report on arrayed germanium-on-silicon waveguide photodetectors for high-power analog applications utilizing the AIM Photonics silicon foundry. Photodetector arrays with two, four, and eight elements reach output powers of −0.4 dBm, 10 dBm, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2eaf427b405e705d31cd1c7f508f350
https://doi.org/10.1109/jstqe.2019.2911458
https://doi.org/10.1109/jstqe.2019.2911458
Autor:
Xiangwen Guo, Linbo Shao, Lingyan He, Kevin Luke, Jesse Morgan, Keye Sun, Junyi Gao, Ta-Ching Tzu, Yang Shen, Dekang Chen, Bingtian Guo, Fengxin Yu, Qianhuan Yu, Masoud Jafari, Marko Lončar, Mian Zhang, Andreas Beling
Publikováno v:
Photonics Research. 10:1338
Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b813506ff353bccf0ddc6432208c089d
https://doi.org/10.1364/prj.455969
https://doi.org/10.1364/prj.455969
Publikováno v:
2020 IEEE Photonics Conference (IPC).
Ge-on-Si waveguide (WG) photodiodes (PDs) with an on-chip biasing circuit are reported. A single PD has a 52-GHz bandwidth (BW) while PD arrays composed of 2 and 4 PDs have radio frequency (RF) saturation powers of -6.7 dBm at 40 GHz and -2.3 dBm at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3618347e94045f8585189a10cb12d49
https://doi.org/10.1109/ipc47351.2020.9252473
https://doi.org/10.1109/ipc47351.2020.9252473
Autor:
Yang Shen, Xingjun Xue, Andrew H. Jones, Yiwei Peng, Junyi Gao, Ta Ching Tzu, Matt Konkol, Joe C. Campbell
Publikováno v:
Optics Express. 30:3047
We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da77439dfce7ce8c780d723791418750
https://doi.org/10.1364/oe.447091
https://doi.org/10.1364/oe.447091
Autor:
Chi-Wai Chow, J. Chen, Hon Ki Tsang, Xinru Wu, Chien-Hung Yeh, Ta-Ching Tzu, Yung Hsu, Chun-Yen Chuang
Publikováno v:
Journal of Lightwave Technology. 35:4943-4948
We propose and demonstrate a 64-Gbit/s four-level pulse-amplitude-modulation transmission by using a limited modulation bandwidth silicon microring modulator (SiMRM) and the Volterra equalization scheme. Severe intersymbol interference caused by both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c3b1542935bc852c300f09359e10cfe
https://doi.org/10.1109/jlt.2017.2766187
https://doi.org/10.1109/jlt.2017.2766187
Publikováno v:
2018 IEEE Photonics Conference (IPC).
A Ge-on-Si photodiode (PD) array is demonstrated using the AIM Photonics silicon foundry. The array with 4 PDs has a low dark current of 0.3 μΑ at −2 V, 0.58 A/W external responsivity, a 3-dB bandwidth of 15 GHz and an RF saturation power of 7 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c2cb5fbd7de7f5963e5eeb62247f88
https://doi.org/10.1109/ipcon.2018.8527107
https://doi.org/10.1109/ipcon.2018.8527107