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pro vyhledávání: '"Ta-Chien Huang"'
Publikováno v:
IEEE Transactions on Electron Devices. 44:2122-2127
A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) with a selective buried sub-collector has been fabricated by two growth steps. The active HBT region was made on the selective buried sub-collector layer with minimum overlap of the extrins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a566cf543305e4615dbfcfe532465541
https://doi.org/10.1109/16.644624
https://doi.org/10.1109/16.644624
