Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Ta Chun Cho"'
Autor:
Md. Aftab Baig, Cheng-Jui Yeh, Shu-Wei Chang, Bo-Han Qiu, Xiao-Shan Huang, Cheng-Hsien Tsai, Yu-Ming Chang, Po-Jung Sung, Chun-Jung Su, Ta-Chun Cho, Sourav De, Darsen Lu, Yao-Jen Lee, Wen-Hsi Lee, Wen-Fa Wu, Wen-Kuan Yeh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 107-113 (2023)
Monolithic 3D stacking of complementary FET (CFET) SRAM arrays increases integration density multi-fold while supporting the inherent SRAM advantages of low write power and near-infinite endurance. We propose stacking multiple 8-transistor CFET-SRAM
Externí odkaz:
https://doaj.org/article/71ecc867419a46bfb68015417da2ac79
Publikováno v:
ACS Omega, Vol 6, Iss 1, Pp 733-738 (2021)
Externí odkaz:
https://doaj.org/article/570dd8adf50b44bba2b28892bcf9274c
Autor:
Shu-Wei Chang, Tsung-Han Lu, Cong-Yi Yang, Cheng-Jui Yeh, Min-Kun Huang, Ching-Fan Meng, Po-Jen Chen, Ting-Hsuan Chang, Yan-Shiuan Chang, Jhe-Wei Jhu, Tzu-Chieh Hong, Chu-Chu Ke, Xin-Ren Yu, Wen-Hsiang Lu, Mohammed Aftab Baig, Ta-Chun Cho, Po-Jung Sung, Chun-Jung Su, Fu-Kuo Hsueh, Bo-Yuan Chen, Hsin-Hui Hu, Chien-Ting Wu, Kun-Lin Lin, William Cheng-Yu Ma, Darsen D. Lu, Kuo-Hsing Kao, Yao-Jen Lee, Cheng-Li Lin, Kun-Ping Huang, Kun-Ming Chen, Yiming Li, Seiji Samukawa, Tien-Sheng Chao, Guo-Wei Huang, Wen-Fa Wu, Wen-Hsi Lee, Jiun-Yun Li, Jia-Min Shieh, Jenn-Hwan Tarng, Yeong-Her Wang, Wen-Kuan Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 69:2101-2107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa9cb013d52736a9ce09e236a25eabeb
https://doi.org/10.1109/ted.2021.3138947
https://doi.org/10.1109/ted.2021.3138947
Autor:
William Cheng-Yu Ma, Chun-Jung Su, Kuo-Hsing Kao, Ta-Chun Cho, Jing-Qiang Guo, Cheng-Jun Wu, Po-Ying Wu, Jia-Yuan Hung
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055006
In this work, a ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon (poly-Si) channel and ferroelectric HfZrOx gate dielectric is demonstrated with analog memory characteristics for the application of synaptic devices. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b409c5d5acd16480e7e25c6750f5805
https://doi.org/10.1149/2162-8777/acd212
https://doi.org/10.1149/2162-8777/acd212
Publikováno v:
ACS Omega, Vol 6, Iss 1, Pp 733-738 (2021)
Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9126ac5424ed6d1417da0fe431e1931
https://doi.org/10.1021/acsomega.0c05282
https://doi.org/10.1021/acsomega.0c05282
Autor:
M. Miura, T.-Z. Hong, C.-J. Tsai, X.-R. Yu, Y.-T. Huang, Y. Chuang, Hiroyuki Ishii, Seiji Samukawa, Chia-Min Lin, G.-L. Luo, C.-J. Su, Jiun-Yun Li, Kuo-Hsing Kao, T.-Y. Chu, Tatsuro Maeda, Po-Jung Sung, W. C.-Y. Ma, H.-Y. Chao, Ta-Chun Cho, Hisu-Chih Chen, W.-H. Chang, Guo-Wei Huang, N.-C. Lin, S.-M. Luo, Kun-Lin Lin, Jia-Min Shieh, Toshifumi Irisawa, K.-P. Huang, Fu-Kuo Hsueh, Chien-Ting Wu, Jianqing Lin, C.-Y. Yang, W.-F. Wu, S.-T. Chung, J.-H. Tarng, Tien-Sheng Chao, Ricky W. Chuang, Darsen D. Lu, Yeong-Her Wang, Yao-Jen Lee, A. Agarwal, Yiming Li, M.-J. Li, Wen-Kuan Yeh
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bondin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85a6f84bd690a0af5c9400f93a632
https://doi.org/10.1109/iedm13553.2020.9372001
https://doi.org/10.1109/iedm13553.2020.9372001
Publikováno v:
ACS Omega
Monolayer doping is a possible method for achieving complex-geometry structures with different semiconductors. Understanding the dopant diffusion behavior of monolayer doping, especially under different heating sources, is essential for further impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::280ab5f364b49cb92a358187cd2a31db
https://pubmed.ncbi.nlm.nih.gov/33458525
https://pubmed.ncbi.nlm.nih.gov/33458525
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:095002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7316eb6db50257e562e63d6e200065
https://doi.org/10.1149/2162-8777/ac2782
https://doi.org/10.1149/2162-8777/ac2782
Autor:
Ta-Chun Cho, Tien-Sheng Chao, Fu-Kuo Hsueh, Po-Jung Sung, Fu-Ju Hou, Sheng-Ti Chung, Yao-Jen Lee, Michael I. Current
Publikováno v:
IEEE Transactions on Electron Devices. 64:2054-2060
In this paper, one proposed an effective method to enhance current drivability of junctionless FETs (JL-FETs) by utilizing uniaxial tensile strain effects. The strained layers were deposited on JL-FETs on silicon-on-insulator (SOI) and bulk Si wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642c50c851815658914b890d4f8ea4b1
https://doi.org/10.1109/ted.2017.2679766
https://doi.org/10.1109/ted.2017.2679766
Autor:
Henry J. H. Chen, Tseung-Yuen Tseng, Yao-Jen Lee, Shang Shiun Chuang, Kuo-Hsing Kao, Michael I. Current, Po Jung Sung, Ta Chun Cho
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P350-P355
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454f40956fff25b811da197e0cc25fcc
https://doi.org/10.1149/2.0011707jss
https://doi.org/10.1149/2.0011707jss