Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Ta Chun Chien"'
Autor:
Chang-Feng Yang, Chun-Yu Wu, Meng-Chun Shih, Ming-Ta Yang, Ming-Han Yang, Yu-Tien Wu, Ta-Chun Chien, Chih-Wei Lai, Shih-Chi Tsai, Wen-Ting Chu, Arthur Hung
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::372dc03dccfce994cdc87d5993ef6041
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830374
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830374
Autor:
Po-Tsun Liu, Dun-Bao Ruan, Ta-Chun Chien, Yu-Chuan Chiu, Simon M. Sze, Min-Chin Yu, Kai-Jhih Gan
Publikováno v:
IEEE Transactions on Nanotechnology. 19:481-485
High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55fa614eef62d14fed5edf41344a3d8
https://doi.org/10.1109/tnano.2020.3004222
https://doi.org/10.1109/tnano.2020.3004222
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
The flexible conductive-bridging random access memory (CBRAM) device using a Cu/TiW/Ga2O3/Pt stack is fabricated on polyimide substrate with low thermal budget process. The CBRAM devices exhibit good memory-resistance characteristics, such as good me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4ce84c032f97a4a38268c1f36e7d6fa
http://link.springer.com/article/10.1038/s41598-019-50816-7
http://link.springer.com/article/10.1038/s41598-019-50816-7
Autor:
Ta Chun Chien, Dun-Bao Ruan, Kai Jhih Gan, Sheng Jie Lin, Simon M. Sze, Po-Tsun Liu, Yu Chuan Chiu
Publikováno v:
Vacuum. 166:226-230
The purpose of this work is to develop a reliable amorphous tungsten-doped indium-zinc oxide based conductive-bridging random access memory (CBRAM). The device with Cu/TiW/InWZnO/Pt structure exhibits stable bipolar resistive switching behavior. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294c7cfaeaf93fce26ee186323800b29
https://doi.org/10.1016/j.vacuum.2019.05.023
https://doi.org/10.1016/j.vacuum.2019.05.023
Autor:
Min Chin Yu, Dun-Bao Ruan, Yu Chuan Chiu, Kai Jhih Gan, Po-Tsun Liu, Ta Chun Chien, Simon M. Sze
Publikováno v:
ACS Applied Materials & Interfaces. 11:22521-22530
In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobilit...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7e5e2bd645eaa2261b967b1b866d75b
https://doi.org/10.1021/acsami.9b04257
https://doi.org/10.1021/acsami.9b04257
Autor:
Wayne Wang, Chun-Yu Wu, Chang-Feng Yang, Wen Ting Chu, Ming-Han Yang, Yung-Huei Lee, Arthur Hung, Ming Ta Yang, Ta-Chun Chien, Shih-Chi Tsai, Vincent Fan
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The read disturb performance and industrially applicable model of mega-bit level embedded RRAM with standard 28 nm select transistor are demonstrated in this study. At first, 100k endurance test on 0.5 Mb RRAM 1 T1R array is implemented and non-degra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcb0e27f9cfb1e655ecdbadb6e7eed9f
https://doi.org/10.1109/vlsitechnology18217.2020.9265060
https://doi.org/10.1109/vlsitechnology18217.2020.9265060
Autor:
Yu Chuan Chiu, Po-Tsun Liu, Kai Jhih Gan, Po Yi Kuo, Yi Heng Chen, Dun-Bao Ruan, Min Chin Yu, Simon M. Sze, Ta Chun Chien
Publikováno v:
Thin Solid Films. 666:94-99
In order to effectively enhance the carrier mobility and device stability, simultaneously, a multi-stacked active layer of thin film transistor with a novel type of channel material, amorphous indium-tungsten-oxide, is proposed in this work. Atop-cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f0d169f19d3e62a832c62e926ad478
https://doi.org/10.1016/j.tsf.2018.09.005
https://doi.org/10.1016/j.tsf.2018.09.005
Publikováno v:
Surface and Coatings Technology. 354:169-174
We demonstrate the characteristics of a conductive-bridging random access memory (CBRAM) with Cu/TiW/InGaZnO/Ga2O3/Pt stack structure. The addition of a thin metal-oxide layer (4.5 nm-thick Ga2O3) in the bottom of the CBRAM device significantly incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17685891717606469e7f4cbb5dd4fe84
https://doi.org/10.1016/j.surfcoat.2018.08.093
https://doi.org/10.1016/j.surfcoat.2018.08.093
Autor:
Po Yi Kuo, Kai Jhih Gan, Min Chin Yu, Ta Chun Chien, Simon M. Sze, Po-Tsun Liu, Yu Chuan Chiu, Dun-Bao Ruan, Yi Heng Chen
Publikováno v:
Thin Solid Films. 665:117-122
The electrical characteristics and XPS analysis for the amorphous tungsten and zinc doped indium oxide thin film transistor, which was performed with single or double different fluorine based remote plasma treatment, were investigated in this study.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::983a7fb5df8f246be8e535895ebf62ee
https://doi.org/10.1016/j.tsf.2018.07.053
https://doi.org/10.1016/j.tsf.2018.07.053
Autor:
Yu Chuan Chiu, Simon M. Sze, Yi Heng Chen, Ta Chun Chien, Dun-Bao Ruan, Po-Tsun Liu, Min Chin Yu, Kai Zhi Kan, Po Yi Kuo
Publikováno v:
Thin Solid Films. 660:885-890
Amorphous Indium-Zinc-Tin-Oxide thin-film transistors (a-IZTO TFT) using different types of high-k materials (like HfO2, ZrO2 and Al2O3) as gate dielectric are studied in this work. All gate dielectric films were deposited by physical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb36c0e53b5bfa04b4ee7a1f37896e56
https://doi.org/10.1016/j.tsf.2018.02.036
https://doi.org/10.1016/j.tsf.2018.02.036