Zobrazeno 1 - 10
of 115
pro vyhledávání: '"TZU PIN CHEN"'
Autor:
TZU PIN CHEN, 陳子平
100
This study explores disposition effect for Taiwanese mutual fund investors by examining the long-term performance of efficient investing method using the overseas mutual funds profolios which the customers of Bank F invested most from 2001-2
This study explores disposition effect for Taiwanese mutual fund investors by examining the long-term performance of efficient investing method using the overseas mutual funds profolios which the customers of Bank F invested most from 2001-2
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83753657423435804761
Publikováno v:
2017 International Conference on Computational Science and Computational Intelligence (CSCI).
Finger trembling is a feature for neurodegenerative diseases. Accessing the trembling of fingers can help diagnosis or monitoring of progression of the disease. Currently, tremogram is used in the hospital to measure the trembling of a finger. Tremog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642f992d072325449cfa7b96438314d6
https://doi.org/10.1109/csci.2017.297
https://doi.org/10.1109/csci.2017.297
Publikováno v:
IEEE Transactions on Electron Devices. 60:229-234
ZnO nanorod metal-semiconductor-metal photodetectors prepared on flexible polyimide substrate have been fabricated and investigated in this study. The ZnO nanorod was selectively synthesized between the gap of interdigitated contact by aqueous method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f796e4e54607d83be8c955a30c54851c
https://doi.org/10.1109/ted.2012.2228655
https://doi.org/10.1109/ted.2012.2228655
Publikováno v:
Journal of The Electrochemical Society. 159:J153-J157
Vertical zinc oxide nanorods were synthesized on flexible polyimide (PI) substrate by a low temperature process, aqueous method. The field emission performance of ZnO nanorods can be greatly enhanced by illuminating UV light. It was found that the tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4633aa6f41fe4a7ba207179764424fac
https://doi.org/10.1149/2.jes037205
https://doi.org/10.1149/2.jes037205
Autor:
S. C. Hung, Y. C. Cheng, S. B. Wang, S. H. Chih, Bohr-Ran Huang, Shoou-Jinn Chang, Tzu Pin Chen, Sheng-Joue Young, C. H. Hsiao
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 17:779-784
The authors report the growth of high-density ZnSe/CdSe multiquantum disks on oxidized Si substrate. It was found the as-grown nanotips were tapered with the mixture of cubic zinc blende and hexagonal wurtzite structures. Also, photoluminescence inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eea4047397a27eb69b1992b341fcfcf
https://doi.org/10.1109/jstqe.2010.2061838
https://doi.org/10.1109/jstqe.2010.2061838
Autor:
Chi-Hsiang Hsu, Wen-Chau Liu, Li-Yang Chen, Tzu-Pin Chen, Tai-You Chen, Tsung-Han Tsai, Shiou-Ying Cheng, Yi-Jung Liu, Chien-Chang Huang
Publikováno v:
Solid-State Electronics. 54:279-282
The temperature-dependent characteristics of the non-annealed Ohmic contacts InAlAs/InGaAs MHEMT are studied and demonstrated. Due to the use of Ohmic-recess technique, the improvements on device performance including higher saturation drain current,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d62d531136224d4f135813c1f818b94
https://doi.org/10.1016/j.sse.2009.10.009
https://doi.org/10.1016/j.sse.2009.10.009
Autor:
Shiou Ying Cheng, Chien Chang Huang, Chi Jhung Lee, Li Yang Chen, Tsung-Han Tsai, Tai You Chen, Yi Jhung Liu, Tzu Pin Chen, Wen-Chau Liu
Publikováno v:
Superlattices and Microstructures. 46:715-722
The interesting InGaP/GaAs heterojunction bipolar transistors (HBTs) with different surface passivations on the base surface are fabricated and studied. Experimentally, the HBT device with sulfur treatment passivation displays the lowest offset volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a6e91961c3b88fa6953a7442a78c506
https://doi.org/10.1016/j.spmi.2009.08.012
https://doi.org/10.1016/j.spmi.2009.08.012
Autor:
Huey-Ing Chen, Kun-Wei Lin, Wen-Chau Liu, Li-Yang Chen, Chung-Fu Chang, Yaw-Wen Kuo, Po-Shun Chiu, Yi-Jung Liu, Tsung-Han Tsai, Tzu-Pin Chen
Publikováno v:
Sensors and Actuators B: Chemical. 139:310-316
The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (Δ V th ) of 260 mV is observed upon exposing to a 1% H 2 /air gas. The drain current se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b51b1744a2cc1140f25dcf38dd1ba3
https://doi.org/10.1016/j.snb.2009.03.042
https://doi.org/10.1016/j.snb.2009.03.042
Publikováno v:
IEEE Journal of Quantum Electronics. 45:367-372
An interesting AlGalnP multiquantum-well (MQW) light-emitting diode (LED) with an n-type modulation-doped (MD) structure, grown by low-pressure metal-organic vapor-phase epitaxy (LP-MOVPE), is fabricated and studied. This n-type MD-MQW LED exhibits l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e965777de4e138c12c0a00ad2c9ab6da
https://doi.org/10.1109/jqe.2009.2013211
https://doi.org/10.1109/jqe.2009.2013211
Autor:
Yaw Wen Kuo, Tzu Pin Chen, Huey-Ing Chen, Tsung-Han Tsai, Wen-Chau Liu, Ching Wen Hung, Li Yang Chen, Kun-Wei Lin, C. Chang, Yi Chun Liu
Publikováno v:
Sensors and Actuators B: Chemical. 136:338-343
In this work, the comprehensive study of the hydrogen adsorption effects on the Pd/AlGaN-based MOS Schottky diode with SiO 2 passivation is demonstrated. Hydrogen sensing performance of the proposed device is significantly enhanced with the insertion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec174bfab7d837c610ee664f3d403c11
https://doi.org/10.1016/j.snb.2008.12.030
https://doi.org/10.1016/j.snb.2008.12.030