Zobrazeno 1 - 10
of 647 400
pro vyhledávání: '"TRANSISTOR design '
Autor:
Ladbrooke, Peter H.
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is va
Autor:
Sou, Antony
The field of organic electronics spans a very wide range of disciplines from physics and chemistry to hardware and software engineering. This makes the field of organic circuit design a daunting prospect full of intimidating complexities, yet to be e
We propose a novel constrained Bayesian Optimization (BO) algorithm optimizing the design process of Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) transistors while realizing a target Breakdown Voltage (BV). We convert the constrained BO probl
Externí odkaz:
http://arxiv.org/abs/2308.09612
Autor:
Arsen Ahmed, Hüseyin Demirel
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 117-123 (2023)
In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silic
Externí odkaz:
https://doaj.org/article/f10997454548452ebe05ddbf1afd5000
Publikováno v:
Science. 11/18/2022, Vol. 378 Issue 6621, p733-740. 8p. 5 Color Photographs.
Publikováno v:
IEEE Access, Vol 11, Pp 64782-64795 (2023)
This work introduces three novel chaotic map circuits. Two of the map circuits use two $p$ -channel and one $n$ -channel silicon-on-insulator (SOI) four-gate transistor (G 4FET) while the third design uses two $n$ -channel and one $p$ -channel G 4FET
Externí odkaz:
https://doaj.org/article/0fc2f29083cf4687ae11e2e4f4e86ec1