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Resistive random access memory (RRAM) is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highl
Externí odkaz:
http://arxiv.org/abs/2308.02767
Publikováno v:
Journal of Superconductivity & Novel Magnetism; Oct2024, Vol. 37 Issue 8-10, p1647-1650, 4p
