Zobrazeno 1 - 2
of 2
pro vyhledávání: '"TR, Raghuram"'
Autor:
TR, Raghuram, Ajoy, Arvind
Publikováno v:
IEEE Trans. Electron Devices. 67 (2020) 5174-5181
We propose a framework to model ferroelectric negative capacitance: electrostatic Micro Electro Mechanical Systems (MEMS) hybrid actuators and analyze their dynamic (step input) response. Using this framework, we report the first proposal for reducti
Externí odkaz:
http://arxiv.org/abs/1904.12808
Autor:
TR Raghuram, T Nethra Devi
Publikováno v:
The International Journal of Electrical Engineering & Education. 58:319-330
Semiconductor device characterization is of prime importance in today’s electronics. This paper intends to throw light on the alternative methods available for semiconductor device characterization that can be implemented in universities/institutes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27fd77354e9e8e610d28bebc4f83e1a9
https://doi.org/10.1177/0020720918825244
https://doi.org/10.1177/0020720918825244
