Zobrazeno 1 - 10
of 34
pro vyhledávání: '"TIMOTHY R. OLDHAM"'
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
A summary of displacement damage sensitivity for bipolar components is presented. For discrete bipolar transistors, sensitivity to DDD correlates with fT. For more complex circuits, a summary of existing test data is presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::575f03cd216279815a8fd1d9b6ca21a3
https://doi.org/10.1109/nsrec.2018.8584312
https://doi.org/10.1109/nsrec.2018.8584312
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
We have conducted TID tests on a variety of parts intended for application in different Ball Aerospace space systems. Results and discussion are presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c51d5fd346290330cfe1973ed6966b
https://doi.org/10.1109/nsrec.2018.8584269
https://doi.org/10.1109/nsrec.2018.8584269
Publikováno v:
Materials Science Forum. :221-224
Homoepitaxial layers with very good thickness and doping uniformity were grown on 4 inch 4˚ off-axis substrates in a 10x100mm planetary reactor. Process optimizations resulted in reduction of the size of the triangular defects. Aggressive pre-etchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::278db42a19072ea1e7e0eb5fbb6fa385
https://doi.org/10.4028/www.scientific.net/msf.740-742.221
https://doi.org/10.4028/www.scientific.net/msf.740-742.221
Autor:
TIMOTHY R. OLDHAM
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:581-603
Positive oxide trapped charge is one of the main factors determining the radiation response of a CMOS device. The most widely accepted model for oxide-trapped charge is the dipole model, originally proposed by Lelis et al. The annealing of radiation-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf024c92ab897989521481ee1d917eeb
https://doi.org/10.1142/s0129156404002533
https://doi.org/10.1142/s0129156404002533
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1744-1749
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO/sub 2/ gate oxides on Si. Switching oxide traps can "switch" charge state in response to changes in the voltage ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b09e24d72601cc7ad7b5fdab93f2ca71
https://doi.org/10.1109/23.488774
https://doi.org/10.1109/23.488774
Autor:
Alvin J. Boutte, Melanie D. Berg, Paul W. Marshall, Dakai Chen, Anthony M. Phan, Paul L. Musil, Raymond L. Ladbury, Jonathan A. Pellish, Jean-Marie Lauenstein, Edward P. Wilcox, Robert A. Gigliuto, Greg A. Overend, Martha V. O'Bryan, Megan C. Casey, Timothy R. Oldham, Cheryl J. Marshall, A.B. Sanders, Kenneth A. LaBel, Hak Kim
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f41019654ae341a4b0ed08cd63222292
https://doi.org/10.1109/redw.2012.6353739
https://doi.org/10.1109/redw.2012.6353739
Autor:
Megan C. Casey, Donna J. Cochran, Dakai Chen, Timothy R. Oldham, Martha V. O'Bryan, Kenneth A. LaBel, David Batchelor, Michael J. Campola, Edward P. Wilcox, Alvin J. Boutte, Raymond L. Ladbury, Jonathan A. Pellish, Jean-Marie Lauenstein
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89b5d43fe20869b8d5fdab948cc5f5c5
https://doi.org/10.1109/redw.2012.6353741
https://doi.org/10.1109/redw.2012.6353741
Publikováno v:
MRS Proceedings. 1433
Homoepitaxial layers were grown with very low surface roughness on 4", 4˚ off-axis substrates, but a new kind of large obtuse angled triangular defect that spanned 1000-2000 μm was observed. Process changes resulted in reduction of the size and con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d2a4d500d5b13ff16f17e86bec11c4a
https://doi.org/10.1557/opl.2012.1055
https://doi.org/10.1557/opl.2012.1055
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2235-2239
A Single Hard Error (SHE) characterization was performed on two types of 1 Mbit SRAMs:MT5C1008 from MICRON and MSM8128 from HITACHI. On both types, test results showed that one single ion is sufficient to create a stuck bit. An orbit SHE rate calcula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::544209f32aeb0745acca1d1e9d0b43d1
https://doi.org/10.1109/23.340568
https://doi.org/10.1109/23.340568
Autor:
Aivars J. Lelis, Timothy R. Oldham
Publikováno v:
IEEE Transactions on Nuclear Science. 41:1835-1843
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd750c0c01479a7de72139389d58a01
https://doi.org/10.1109/23.340515
https://doi.org/10.1109/23.340515