Zobrazeno 1 - 10
of 9 593
pro vyhledávání: '"TIAN HE"'
Publikováno v:
PaperAsia. Jan/Feb2024, Vol. 40 Issue 1(a), p6-6. 1p.
Autor:
Li, Ying, Shen, Yang, Xu, Linqiang, Liu, Shiqi, Chen, Yang, Li, Qiuhui, Yang, Zongmeng, Sun, Xiaotian, Tian, He, Lu, Jing
Sub-1-nm gate length $MoS_2$ transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the sub-1-nm gate length monolayer (ML) $MoS_2$ transistors through ab init
Externí odkaz:
http://arxiv.org/abs/2404.13801
Autor:
Yu, Chenglin, Li, Shaorui, Pan, Zhoujie, Liu, Yanming, Wang, Yongchao, Zhou, Siyi, Gao, Zhiting, Tian, He, Jiang, Kaili, Wang, Yayu, Zhang, Jinsong
Publikováno v:
Nano Lett. 2024, 24, 5, 1620-1628
Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in art
Externí odkaz:
http://arxiv.org/abs/2312.04934
Polar skyrmions have been widely investigated in oxide heterostructure recently, due to their exotic properties and intriguing physical insights. Meanwhile, so far, the external field-driven motion of the polar skyrmion, akin to the magnetic counterp
Externí odkaz:
http://arxiv.org/abs/2308.08219
Publikováno v:
ACS Omega, Vol 9, Iss 28, Pp 30904-30918 (2024)
Externí odkaz:
https://doaj.org/article/0e89700fae634f84b6b77f46884274a7