Zobrazeno 1 - 10
of 193
pro vyhledávání: '"THOMAS J. KISTENMACHER"'
Publikováno v:
Comments on Inorganic Chemistry. 18:325-341
There is increasing interest in the use of Group IIIA nitrides (A1N, GaN, InN, and their alloys) for a variety of optoelectronic applications, including short wavelength sources and detectors. Progress, while spectacular these past few years, has bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200922dc5934fd5ad016e48f5f43d0dc
https://doi.org/10.1080/02603599608033867
https://doi.org/10.1080/02603599608033867
Publikováno v:
Journal of Electronic Materials. 23:1209-1214
The magnitude of the χ xxxx (3) element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (∼450A) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00cf11373b0d11d4a5fc61457bc0dd6
https://doi.org/10.1007/bf02649971
https://doi.org/10.1007/bf02649971
Publikováno v:
Thin Solid Films. 247:258-263
The effects of He/N 2 reactive gas composition on the structural and electrical properties of InN thin films deposited by magnetron sputtering on A1N-nucleated (00.1) sapphire substrates have been investigated. X-ray scattering studies demonstrate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b21e6ba0992eb6ba94263ee40c1f2c3
https://doi.org/10.1016/0040-6090(94)90810-9
https://doi.org/10.1016/0040-6090(94)90810-9
Autor:
J. S. Morgan, Wayne A. Bryden, Thomas J. Kistenmacher, Theodore O. Poehler, R. Fainchtein, D. Dayan
Publikováno v:
Journal of Materials Research. 6:1300-1307
Reactive rf-magnetron sputtering has been employed for the growth of thin films of InN on the (001) face of mica at a variety of substrate temperatures from 50 to 550 °C. These films have been characterized by x-ray scattering, stylus profilometry,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcf77529a09298a4fe4f60ce6ecc2f9c
https://doi.org/10.1557/jmr.1991.1300
https://doi.org/10.1557/jmr.1991.1300
Publikováno v:
Journal of Applied Physics. 68:1541-1544
Thin films of InN and AlN/InN bilayers have been deposited on (0001) sapphire at a variety of substrate temperatures by reactive rf‐magnetron sputtering. For all films, the c axis of the metal nitride film parallels the c axis of the sapphire subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::273d9b531c0fc09e5499a9343e52e6b5
https://doi.org/10.1063/1.346630
https://doi.org/10.1063/1.346630
Autor:
Li Xiao, K. Douglas Carlson, Thomas J. Kistenmacher, M.D. Mays, Mark A. Beno, Aravinda M. Kini, Jack M. Williams, Dwaine O. Cowan, Theodore O. Poehler, Myung-Hwan Whangbo, Yai-Kwong Kwok, Juan J. Novoa
Publikováno v:
Molecular Crystals and Liquid Crystals Incorporating Nonlinear Optics. 181:43-58
We report the crystal structure and physical properties of TTeF-TCNQ, compare the electrical conductivities of TXF-TCNQ (X ˭ S, Se, Te) by performing tight-binding band calculations on TXF-TCNQ, and examine the differences in the packing patterns of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190ebc25f36e4ea0db43059c78e8342c
https://doi.org/10.1080/00268949008035991
https://doi.org/10.1080/00268949008035991
Publikováno v:
Applied Physics Letters. 67:3771-3773
Measures of the mosaic dispersion of a series of self‐nucleated AlxGa1−xN thin films, grown by low‐pressure metalorganic chemical vapor deposition in a nitrogen carrier gas, have been accumulated by a combination of reciprocal space x‐ray sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb4d954eb34618ecc2d198b3ef79e81
https://doi.org/10.1063/1.115378
https://doi.org/10.1063/1.115378
Publikováno v:
Applied Physics Letters. 64:2864-2866
A novel deposition technique, ultrahigh vacuum electron cyclotron resonance (ECR)‐assisted reactive magnetron sputtering, has been developed for the preparation of group IIIA nitride thin films. In initial experiments, thin films of the semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5476473181842a81f9c66f9db041944
https://doi.org/10.1063/1.111451
https://doi.org/10.1063/1.111451
Publikováno v:
Applied Physics Letters. 62:1221-1223
The effects of bias and nucleation layer thickness on heteroepitaxy in thin films of InN grown at 400 °C on semiconducting (111) silicon and insulating (00.1) sapphire are shown to be dramatically different. For example, the thickness of an InN film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb518a2b1d2a87ee079d5f9bafcf6be
https://doi.org/10.1063/1.108740
https://doi.org/10.1063/1.108740
Autor:
Robert B. Givens, Dennis K. Wickenden, Robert Osiander, John L. Champion, James L. Lamb, Thomas J. Kistenmacher
Publikováno v:
2000 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
The recently developed JHU/APL magnetometer, which is based on a free-free (xylophone) resonating bar, is simple, small, light weight, has a low power consumption and utilizes the Lorentz force to measure vector magnetic fields. The device is intrins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dcf2fd3ed93bcf005be24d2ee039338
https://doi.org/10.31438/trf.hh2000.36
https://doi.org/10.31438/trf.hh2000.36