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Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Autor: Nick Baker, Yvan Avenas, Laurent Dupont, Marco Liserre

Publikováno v: IECON
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society, Nov 2013, Vienne, Austria. p. 942-948, ⟨10.1109/IECON.2013.6699260⟩
Baker, N, Liserre, M, Dupont, L & Avenas, Y 2013, Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters . in Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013 ., 6699260, IEEE Press, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 942-948, 39th Annual Conference of the IEEE Industrial Electronics Society, Wien, Austria, 10/11/2013 . https://doi.org/10.1109/IECON.2013.6699260
Annual Conference of the IEEE Industrial Electronics Society, IECON
Annual Conference of the IEEE Industrial Electronics Society, IECON, 2013, Vienne, Austria. pp.942-948

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society , Vienne, AUTRICHE, 10-/11/2013 - 13/11/2013; The temperature of a power semiconductor device is important for both its optimal operation and reliability. If the temperatu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00b6a622c783fccb894dd8fbcbfe92d5
https://doi.org/10.1109/iecon.2013.6699260

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters – A Review

Autor: Yvan Avenas, Zoubir Khatir, Laurent Dupont

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2012, 27 (6), pp.3081-3092
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2012, p.3081-3092. ⟨10.1109/TPEL.2011.2178433⟩

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccdf7121c5d630d0d4a64fdfb731f849
https://hal.archives-ouvertes.fr/hal-01073933/document

Instrumented Chip Dedicated to Semiconductor Temperature Measurements in Power Electronic Converters

Autor: Jean-Christophe Crebier, Ibrahima Ka, Benoit Thollin, Mickael Petit, Laurent Dupont, Raha Vafaei, Yvan Avenas

Publikováno v: HAL
ECCE 2016-IEEE Energy Conversion Congress and Exposition
ECCE 2016-IEEE Energy Conversion Congress and Exposition, Sep 2016, Milwaukee, United States. 11p, ⟨10.1109/ECCE.2016.7855208⟩

ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Milwaukee, ETATS-UNIS, 18-/09/2016 - 22/09/2016; Temperature measurement of semiconductor components is essential, in particular to evaluate performances and to propose health monitoring of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5a19028039af1c0fc925b046a8fc3ed
https://hal.archives-ouvertes.fr/hal-01377217