Evaluation of chip temperature for multichip IGBT modules by using the thermo-sensitive electrical parameter (TSEP)

Autor: Qiu Zhijie, Wen Xuhui, Zhang Jin

Publikováno v: 2013 International Conference on Electrical Machines and Systems (ICEMS).

The thermo-sensitive electrical parameters (TSEPs) is often used for evaluating junction temperature of power semiconductor device due to its convenient and fast measurement. However, this method can not establish a temperature map inside a module wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be08a5656592b10621fe60a842fa9332
https://doi.org/10.1109/icems.2013.6713275

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Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters

Autor: Nick Baker, Yvan Avenas, Laurent Dupont, Marco Liserre

Publikováno v: IECON
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society, Nov 2013, Vienne, Austria. p. 942-948, ⟨10.1109/IECON.2013.6699260⟩
Baker, N, Liserre, M, Dupont, L & Avenas, Y 2013, Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters . in Proceedings of the 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013 ., 6699260, IEEE Press, Proceedings of the Annual Conference of the IEEE Industrial Electronics Society, pp. 942-948, 39th Annual Conference of the IEEE Industrial Electronics Society, Wien, Austria, 10/11/2013 . https://doi.org/10.1109/IECON.2013.6699260
Annual Conference of the IEEE Industrial Electronics Society, IECON
Annual Conference of the IEEE Industrial Electronics Society, IECON, 2013, Vienne, Austria. pp.942-948

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society , Vienne, AUTRICHE, 10-/11/2013 - 13/11/2013; The temperature of a power semiconductor device is important for both its optimal operation and reliability. If the temperatu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00b6a622c783fccb894dd8fbcbfe92d5
https://doi.org/10.1109/iecon.2013.6699260

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters – A Review

Autor: Yvan Avenas, Zoubir Khatir, Laurent Dupont

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2012, 27 (6), pp.3081-3092
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2012, p.3081-3092. ⟨10.1109/TPEL.2011.2178433⟩

This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccdf7121c5d630d0d4a64fdfb731f849
https://hal.archives-ouvertes.fr/hal-01073933/document