Zobrazeno 1 - 10
of 5 143
pro vyhledávání: '"TFTs"'
Autor:
Yujia Qian, Xishuang Gu, Ting Li, Peixuan Hu, Xiaohan Liu, Junyan Ren, Lingyan Liang, Hongtao Cao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by envir
Externí odkaz:
https://doaj.org/article/bbb1fa103ff448d6b7a42638ab3afc05
Akademický článek
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Autor:
Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 10, Pp n/a-n/a (2024)
Abstract Active sensing matrices play a pivotal role in various electronic devices, including optical and X‐ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin‐film active swit
Externí odkaz:
https://doaj.org/article/b5d72b32757f4f938c7bf43aa2070c2d
Autor:
Liu, Zi Chun a, Li, Jia Cheng a, Zhang, Yi Yun b, Yang, Hui Xia a, ⁎, Ma, Yuan Xiao a, ⁎, Wang, Ye Liang a, ⁎
Publikováno v:
In Applied Surface Science 15 March 2025 685
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 956-964 (2024)
Metal Oxide Thin Film Transistors (MO TFTs) have garnered considerable interest in emerging Internet of Things (IoT) fields such as wearable electronics, displays, Radio Frequency Identification (RFID), and biomedical monitoring, owing to their flexi
Externí odkaz:
https://doaj.org/article/6de9b3402d204356bdda8ece0c4abf45
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 919-927 (2024)
A DC model is proposed for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) applicable to various active layer thicknesses. With the back surface potential and its coupling with the front surface potential being considered, an explici
Externí odkaz:
https://doaj.org/article/36961c317d644a6d81657b1b02ad70b3
Autor:
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 564-568 (2024)
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in o
Externí odkaz:
https://doaj.org/article/0ebef8af161c4d67b5095f0a9d0c8274
Autor:
Wenyang Zhang, Li Lu, Chenfei Li, Weijie Jiang, Wenzhao Wang, Xingqiang Liu, Ablat Abliz, Da Wan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 502-507 (2024)
Herein, highly stable nitrogen (N) doped amorphous indium gallium tin oxide (a-IGTO) thinfilm transistors (TFTs) are prepared and the effects of N-doping are investigated. Compared with undoped a-IGTO TFTs, a-IGTO TFTs with 6 min N plasma treatment e
Externí odkaz:
https://doaj.org/article/ab217a3f1a584abe87876197bfa4b30b
Autor:
Chih-Lung Lin, Chia-Lun Lee, Cheng-Han Ke, Po-Cheng Lai, Chung-Tien Chiu, Yu-Chang Chiu, Chia-Wei Kuo
Publikováno v:
IEEE Access, Vol 12, Pp 78122-78131 (2024)
This paper presents a lifetime optimization of optical sensing system that integrates highly reliable optical sensors and driver circuits that use hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) to realize binary detection of optic
Externí odkaz:
https://doaj.org/article/f815a8bccb1a46df941e381c43bee48f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 159-164 (2024)
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O p
Externí odkaz:
https://doaj.org/article/ec66fa3d8b8c4dc88f9d973f9034bcef