Zobrazeno 1 - 10
of 6 337
pro vyhledávání: '"TCAD"'
Autor:
Marwa S. Salem, Ahmed Shaker, Chao Chen, Luying Li, Mohamed Abouelatta, Arwa N. Aledaily, Walid Zein, Mohamed Okil
Publikováno v:
Ain Shams Engineering Journal, Vol 15, Iss 9, Pp 102919- (2024)
Antimony chalcogenide, as a newcomer to light harvesting materials, is regarded as an auspicious contender for incorporation as a photoactive layer in thin film tandem solar cells (TFTSCs). The current study introduces the design of all-antimony chal
Externí odkaz:
https://doaj.org/article/f1615326ecf947329db115385fa4424d
Autor:
Xiaohui Zhu, Huaxiang Yin
Publikováno v:
Results in Physics, Vol 63, Iss , Pp 107856- (2024)
Silicon (Si)-based quantum-dot (QD) device by advanced CMOS process is one of important technologies for quantum computing application and currently, it needs a fast and accurate quantum characteristics simulation for designing and optimizing the dev
Externí odkaz:
https://doaj.org/article/08508fac67664cc3a726aae9237e1209
Publikováno v:
Heliyon, Vol 10, Iss 13, Pp e34134- (2024)
Here, we investigate the effects of interface defects on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs) utilizing bottom, top, and dual gatings. The field-effect mobility (27.3 cm2/V
Externí odkaz:
https://doaj.org/article/02f0e8f4722246508aa6fa66219d68db
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 619-626 (2024)
Engineers used TCAD tools for semiconductor devices modeling. However, it is computationally expensive and time-consuming for advanced devices with smaller dimensions. Therefore, this work proposes a machine learning-based device modeling algorithm t
Externí odkaz:
https://doaj.org/article/5a2f7eb3ea094365a5331344dcf613b0
Autor:
Jiahui Chen, Wangyong Chen, Linlin Cai, Haifeng Chen, Pengling Yang, Dahui Wang, Manling Shen, Xiangyang Li, Hui Qiao
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 4, Pp 1-8 (2024)
In recent years, there has been a growing interest in photovoltaic detectors based on mercury cadmium telluride (Hg1-xCdxTe), owing to their exceptional photoelectric properties. To provide the physical insights into the modulation effects of Cd comp
Externí odkaz:
https://doaj.org/article/8432b21e03ff405d86a3efe36d68b8c3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 433-439 (2024)
Systematic comparison of dynamic performance has been made among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. The results from a new evaluation method demonstrate superior turn-off dV/dt controllability in scaled IGBTs
Externí odkaz:
https://doaj.org/article/9a5e71c21df8432994f1b2f7a66ee96f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 145-149 (2024)
In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag p
Externí odkaz:
https://doaj.org/article/92e43da75e75417284564f8691ede4f7
Akademický článek
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Publikováno v:
Chip, Vol 3, Iss 2, Pp 100094- (2024)
Tunneling-based static random-access memory (SRAM) devices have been developed to fulfill the demands of high density and low power, and the performance of SRAMs has also been greatly promoted. However, for a long time, there has not been a silicon b
Externí odkaz:
https://doaj.org/article/c4273e86f5434ecda9337311b943730c
Autor:
Bhaskar Awadhiya, Rahul Ratnakumar, Sampath Kumar, Sameer Yadav, Kaushal Nigam, Yashwanth Nanjappa, P.N. Kondekar
Publikováno v:
Heliyon, Vol 10, Iss 11, Pp e32325- (2024)
Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junct
Externí odkaz:
https://doaj.org/article/25a24d0a69544d0788885344e03e6fcc