Zobrazeno 1 - 2
of 2
pro vyhledávání: '"TBH en SiGe"'
Autor:
Cabbia, Marco
Publikováno v:
Electronics. Université de Bordeaux, 2021. English. ⟨NNT : 2021BORD0017⟩
Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::59c39ca2f4189bf2b131195166a73569
https://tel.archives-ouvertes.fr/tel-03150165/file/CABBIA_MARCO_2021.pdf
https://tel.archives-ouvertes.fr/tel-03150165/file/CABBIA_MARCO_2021.pdf
Autor:
Cabbia, Marco
Publikováno v:
Electronics. Université de Bordeaux, 2021. English. ⟨NNT : 2021BORD0017⟩
Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::374a6cbd99b785cacbfc79711866c660
https://theses.hal.science/tel-03150165
https://theses.hal.science/tel-03150165