Zobrazeno 1 - 10
of 17 478
pro vyhledávání: '"TANIGUCHI, T."'
Autor:
Assouline, A., Pugliese, L., Chakraborti, H., Lee, Seunghun, Bernabeu, L., Jo, M., Watanabe, K., Taniguchi, T., Glattli, D. C., Kumada, N., Sim, H. -S., Parmentier, F. D., Roulleau, P.
Publikováno v:
Science 382, 1260, 2023
Flying qubits encode quantum information in propagating modes instead of stationary discrete states. Although photonic flying qubits are available, the weak interaction between photons limits the efficiency of conditional quantum gates. Conversely, e
Externí odkaz:
http://arxiv.org/abs/2412.09918
Autor:
Castelló, O., Baptista, Sofía M. López, Watanabe, K., Taniguchi, T., Diez, E., Velázquez-Pérez, J. E., Meziani, Y. M., Caridad, J. M., Delgado-Notario, J. A.
Publikováno v:
Frontiers of Optoelectronics, Volume 17, article number 19, (2024)
In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz applications,
Externí odkaz:
http://arxiv.org/abs/2412.07279
Autor:
Walczyk, K., Krasucki, G., Olkowska-Pucko, K., Chen, Z., Taniguchi, T., Watanabe, K., Babiński, A., Koperski, M., Molas, M. R., Zawadzka, N.
Publikováno v:
Solid State Communications (2024)
Layered materials have attracted significant interest because of their unique properties. Van der Waals heterostructures based on transition-metal dichalcogenides have been extensively studied because of potential optoelectronic applications. We inve
Externí odkaz:
http://arxiv.org/abs/2411.16576
Autor:
Salvador-Sánchez, J., Pérez-Rodriguez, A., Clericò, V., Zheliuk, O., Zeitler, U., Watanabe, K., Taniguchi, T., Diez, E., Amado, M., Bellani, V.
Publikováno v:
Eur. Phys. J. Plus 139, 979 (2024)
In a twisted graphene on hexagonal Boron Nitride, the presence of a gap and the breaking of the symmetry between carbon sublattices leads to multicomponent fractional quantum Hall effect (FQHE) due to the electrons correlation. We report on the FQHE
Externí odkaz:
http://arxiv.org/abs/2411.07958
Autor:
Taniguchi, T., Osato, K., Okabe, H., Kitazawa, T., Kawamata, M., Hashimoto, S., Ikeda, Y., Nambu, Y., Sari, D. P., Watanabe, I., Nakamura, J. G., Koda, A., Gouchi, J., Uwatoko, Y., Kittaka, S., Sakakibara, T., Mizumaki, M., Kawamura, N., Yamanaka, T., Hiraki, K., Sasaki, T., Fujita, M.
YbCu4Au is a unique material exhibiting multiple quantum fluctuations simultaneously. In this study, we investigated the field-induced criticality in YbCu4Au, based on comprehensive micro and macro measurements, including powder X-ray diffraction (XR
Externí odkaz:
http://arxiv.org/abs/2411.05280
Autor:
Farrar, L. S., Maffione, G., Nguyen, V. -H., Watanabe, K., Taniguchi, T., Charlier, J. -Ch., Mailly, D., Ribeiro-Palau, R.
The energy gap of Bernal-stacked bilayer graphene can be tuned by applying a perpendicular electric field. The origin of this gap can be traced down to the breaking of its inversion symmetry by an onsite potential difference between the layers. This
Externí odkaz:
http://arxiv.org/abs/2410.01433
Autor:
Kumar, Ravi, Srivastav, Saurabh Kumar, Roy, Ujjal, Singhal, Ujjawal, Watanabe, K., Taniguchi, T., Singh, Vibhor, Roulleau, P., Das, Anindya
The charge neutrality point of bilayer graphene, denoted as {\nu} = 0 state, manifests competing phases marked by spontaneously broken isospin (spin/valley/layer) symmetries under external magnetic and electric fields. However, due to their electrica
Externí odkaz:
http://arxiv.org/abs/2409.09663
Autor:
Devarakonda, Aravind, Koay, Christie S., Chica, Daniel G., Thinel, Morgan, Kundu, Asish K., Lin, Zhi, Georgescu, Alexandru B., Rossi, Sebastian, Han, Sae Young, Ziebel, Michael E., Holbrook, Madisen A., Rajapitamahuni, Anil, Vescovo, Elio, Watanabe, K., Taniguchi, T., Delor, Milan, Zhu, Xiaoyang, Pasupathy, Abhay N., Queiroz, Raquel, Dean, Cory R., Roy, Xavier
Materials hosting flat electronic bands are a central focus of condensed matter physics as promising venues for novel electronic ground states. Two-dimensional (2D) geometrically frustrated lattices such as the kagome, dice, and Lieb lattices are att
Externí odkaz:
http://arxiv.org/abs/2408.01512
Autor:
Icking, E., Emmerich, D., Watanabe, K., Taniguchi, T., Beschoten, B., Lemme, M. C., Knoch, J., Stampfer, C.
Publikováno v:
Nano Letters 24, 11454 (2024)
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power cons
Externí odkaz:
http://arxiv.org/abs/2408.01111
Autor:
Kipczak, Ł., Zawadzka, N., Jana, D., Antoniazzi, I., Grzeszczyk, M., Zinkiewicz, M., Watanabe, K., Taniguchi, T., Potemski, M., Faugeras, C., Babiński, A., Molas, M. R.
The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged da
Externí odkaz:
http://arxiv.org/abs/2407.18117