Zobrazeno 1 - 10
of 21
pro vyhledávání: '"TALVACCHIO, JOHN"'
Autor:
Lu, Rongtao, Elliot, Alan J., Wille, Logan, Mao, Bo, Han, Siyuan, Wu, Judy Z., Talvacchio, John, Schulze, Heidi M., Lewis, Rupert M., Ewing, Daniel J., Yu, H. F., Xue, G. M., Zhao, S. P.
Publikováno v:
IEEE Trans. Appl. Supercond. Vol. 23, No. 3, June 2013
Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers i
Externí odkaz:
http://arxiv.org/abs/1309.4410
Autor:
Elliot, Alan J., Malek, Gary, Wille, Logan, Lu, Rongtao, Han, Siyuan, Wu, Judy Z., Talvacchio, John, Lewis, Rupert M.
Publikováno v:
IEEE Trans. Appl. Supercond. Vol 23, No. 3, June 2013
Ultrathin dielectric tunneling barriers are critical to Josephson junction (JJ) based superconducting quantum bits (qubits). However, the prevailing technique of thermally oxidizing aluminum via oxygen diffusion produces problematic defects, such as
Externí odkaz:
http://arxiv.org/abs/1309.4404
Akademický článek
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Publikováno v:
IEEE Transactions on Applied Superconductivity. Jun2003 Part 1 of 3, Vol. 13 Issue 2, p829. 4p. 4 Diagrams, 4 Graphs.
Publikováno v:
Engineering Superconductivity; 2001, p248-260, 13p
Publikováno v:
Encyclopedia of Electrical & Electronics Engineering; 1999 1st Edition, Vol. 9, p225-237, 13p
Autor:
Talvacchio, John, Wagner, George R.
Publikováno v:
Proceedings of SPIE; Nov1990, Issue 1, p2-12, 11p
Autor:
Zhou, JiPing, Lo, Rung-Kuang, McDevitt, John T., Talvacchio, John, Forrester, Martin G., Hunt, Brian D., Jia, Q. X., Reagor, D.
Publikováno v:
Journal of Materials Research; 11/01/1997, Vol. 12 Issue 11, p2958-2975, 18p
Autor:
McCambridge, James D., Forrester, Martin G., Miller, Donald L., Hunt, Brian D., Pryzbysz, John X., Talvacchio, John, Young, Robert M.
Publikováno v:
In Computer Standards & Interfaces 1999 21(2):100-100
Publikováno v:
In Applied Superconductivity 1997 5(7):365-371