Zobrazeno 1 - 10
of 245
pro vyhledávání: '"TAE SIK YOON"'
Autor:
Dong Wan Lee, Jin Woo Kim, Su Gwan Lee, Dhin Van Cong, Jin Chun Kim, Hwi Jun Kim, Joong Gyeong Lim, Tae Sik Yoon
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 69, Iss No 2, Pp 467-470 (2024)
Oxide dispersion-strengthened (ODS) superalloys are usually manufactured by a hot isostatic pressing after mechanical alloying (MA-HIP). However, this process cannot produce complex-shaped parts. Here, we used an additive manufacturing product (powde
Externí odkaz:
https://doaj.org/article/0893ca9cc5914991a7c39d2f27eb2c29
Publikováno v:
Healthcare Informatics Research, Vol 21, Iss 4, Pp 271-282 (2015)
ObjectivesRemote medical services have been expanding globally, and this is expansion is steadily increasing. It has had many positive effects, including medical access convenience, timeliness of service, and cost reduction. The speed of research and
Externí odkaz:
https://doaj.org/article/086ed4ec19b04438bf19395aa1977f4f
Autor:
Hyo Soung Cha, Tae Sik Yoon, Ki Chung Ryu, Il Won Shin, Yang Hyo Choe, Kyoung Yong Lee, Jae Dong Lee, Keun Ho Ryu, Seung Hyun Chung
Publikováno v:
Healthcare Informatics Research, Vol 21, Iss 2, Pp 95-101 (2015)
ObjectivesNew methods for obtaining appropriate information for users have been attempted with the development of information technology and the Internet. Among such methods, the demand for systems and services that can improve patient satisfaction h
Externí odkaz:
https://doaj.org/article/1173dcb8413d40a08e8346f5bc08ba53
Publikováno v:
Materials Today Advances, Vol 15, Iss , Pp 100264- (2022)
Non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange are demonstrated in a thin-film transistor (TFT) composed of an indium-zinc oxide (IZO) channel and an oxygen-deficient HfO2–x gate oxide. A nonvolatile
Externí odkaz:
https://doaj.org/article/b428833c053047a69f8377b3b9129ddd
Publikováno v:
ACS Applied Electronic Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115a5d2a345a7059d4227b4a79d0aaa4
https://doi.org/10.1021/acsaelm.3c00473
https://doi.org/10.1021/acsaelm.3c00473
Publikováno v:
Advanced Electronic Materials. 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::930874264924d524c76e032575b396dd
https://doi.org/10.1002/aelm.202370021
https://doi.org/10.1002/aelm.202370021
Publikováno v:
RSC Advances. 12:18547-18558
A NbOx layer features forming-free bipolar threshold switching for the application to selector devices in crossbar array architectures through controlling conducting phases in the layer by precise deposition and interaction with a niobium electrode.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7e3de4f22f14ca929e81019505fac00
https://doi.org/10.1039/d2ra02930h
https://doi.org/10.1039/d2ra02930h
Publikováno v:
Journal of Alloys and Compounds. 951:169858
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3722efbde2a76dfc2d9c643a5a321f
https://doi.org/10.1016/j.jallcom.2023.169858
https://doi.org/10.1016/j.jallcom.2023.169858
Publikováno v:
ACS Applied Nano Materials. 3:10922-10930
Strain-induced modulation of electronic, magnetic, and photonic properties provides additional functionalities to oxide thin film-based electronics as compared to those of conventional rigid electr...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ec240ab9bd8db424a077aa1ac3568a
https://doi.org/10.1021/acsanm.0c02181
https://doi.org/10.1021/acsanm.0c02181
Autor:
Hyun-Mi Kim, Hyerin Lee, Sangbong Lee, Tae-Sik Yoon, Min-Sik Kim, Ki-Bum Kim, Minsu Kim, Yeong-Ho Cho, Yun-Ho Kang
Publikováno v:
ACS Applied Materials & Interfaces. 12:39372-39380
This study reports on the effect of a bilayer period on the growth behavior, microstructure evolution, and electrical properties of atomic layer deposition (ALD) deposited In-Zn-O (IZO) films, fixing the ALD cycle ratio of In-O/Zn-O as 9:1. Here, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc154a046af1f82e88e33b96d50fe4b2
https://doi.org/10.1021/acsami.0c07540
https://doi.org/10.1021/acsami.0c07540