Zobrazeno 1 - 10
of 29
pro vyhledávání: '"T.Yu. Chemekova"'
Autor:
S. S. Nagalyuka, Vladimir T. Bublik, Alexandr Dmitrievich Roenkov, A A Antipov, I. S. Barash, T.Yu. Chemekova, Heikki Helava, E. N. Mokhov, K. D. Scherbatchev, Yu.N. Makarov, S Yu Kurin
Publikováno v:
Russian Microelectronics. 42:477-482
Some results on the creation of ultraviolet light-emitting diodes based on GaN/AlGaN heterostructures grown on aluminum nitride (AlN) substrates using the method of chloride-hydride epitaxy are presented. The peak wavelengths lie within the range of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e264fe520257dde3f9a4c31b7c4eb4b
https://doi.org/10.1134/s1063739713080039
https://doi.org/10.1134/s1063739713080039
Autor:
T.Yu. Chemekova, S. S. Nagalyuk, Vladimir T. Bublik, I. A. Belogorokhov, Heikki Helava, N. B. Smirnov, A. V. Govorkov, K. D. Scherbatchev, A. Ya. Polyakov, Oleg Avdeev, E. N. Mokhov, Yu.N. Makarov
Publikováno v:
Russian Microelectronics. 40:629-633
The structural characteristics and electrical properties of bulk aluminum nitride crystals grown by sublimation and used as substrates for light emitting diode (LED) structures and AlGaN/GaN field effect transistors were studied. The crystalline perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91571eabb813091f400b4f09bd59280
https://doi.org/10.1134/s1063739711080178
https://doi.org/10.1134/s1063739711080178
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:1136-1139
Currently, wafers of aluminum nitride cut from bulk aluminum nitride crystals (AlN) grown by sublimation are considered promising substrates for obtaining light-emitting diode structures based on nitrides of the third group. In this study, the struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0e3cd9304e3b57cca4fee0bbb11a0a
https://doi.org/10.1134/s1027451011120044
https://doi.org/10.1134/s1027451011120044
Autor:
D. P. Litvin, P. L. Abramov, A. V. Vasiliev, T.Yu. Chemekova, Yu.N. Makarov, A. S. Tregubova, A. A. Lebedev, Marina G. Mynbaeva
Publikováno v:
Semiconductors. 45:828-831
Sublimation epitaxy in a vacuum has been used to grow silicon carbide layers with a low defect concentration and with SiC wafers cut from single-crystal ingots produced by the modified Lely method serving as substrates. It is concluded on the basis o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a867811e953fadd8703ec718fef092d8
https://doi.org/10.1134/s1063782611060157
https://doi.org/10.1134/s1063782611060157
Autor:
O.V. Avdeev, M.G. Ramm, N. Mokhov, S. S. Nagalyuk, T.Yu. Chemekova, Yu.N. Makarov, Heikki Helava
Publikováno v:
Materials Science Forum. :1183-1186
AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::477dabbc3981cf8c11b1794c02d18c69
https://doi.org/10.4028/www.scientific.net/msf.645-648.1183
https://doi.org/10.4028/www.scientific.net/msf.645-648.1183
Autor:
E. N. Mokhov, Heikki Helava, Yu.N. Makarov, A.S. Segal, Boris M. Epelbaum, Matthias Bickermann, J.-M. Mäki, G. Huminic, O.V. Avdeev, S. Davis, T.Yu. Chemekova, M.G. Ramm, Filip Tuomisto
Publikováno v:
Journal of Crystal Growth. 310:3998-4001
A1. Characterization A1. Point defects A2. Growth from vapor B1. Nitrides B2. Semiconducting aluminum compounds abstract We have applied positron annihilation spectroscopy to study in-grown vacancy defects in bulk aluminium nitride (AlN) crystals gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09615f1e7779570755163ce9b9f5b62b
https://doi.org/10.1016/j.jcrysgro.2008.06.013
https://doi.org/10.1016/j.jcrysgro.2008.06.013
Autor:
T.Yu. Chemekova, Yu. A. Vodakov, O.V. Avdeev, I. S. Barash, Heikki Helava, Yu.N. Makarov, G. Huminic, S. Davis, S. S. Nagalyuk, E. N. Mokhov, D. S. Bazarevskiy, A.S. Segal, Alexandr Dmitrievich Roenkov, M.G. Ramm
Publikováno v:
Journal of Crystal Growth. 310:881-886
The current status of sublimation growth of aluminum nitride (AlN) bulk crystals is discussed. Growth of AlN single-crystal layers on silicon carbide (SiC) seeds in pre-carbonized tantalum crucibles in graphite equipment and of AlN bulk crystals on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded8a013e92e8a4f6cbfc8ef8f65de5f
https://doi.org/10.1016/j.jcrysgro.2007.11.059
https://doi.org/10.1016/j.jcrysgro.2007.11.059
Autor:
T.Yu. Chemekova, Yu.N. Makarov, O.V. Avdeev, I. S. Barash, Alexandr Dmitrievich Roenkov, M.G. Ramm, E. N. Mokhov, A.S. Segal, Heikki Helava, A.A. Wolfson
Publikováno v:
Journal of Crystal Growth. 281:93-100
AlN single crystals of 0.5 in diameter and up to 10–12 mm long have been grown by sublimation/recondensation in pre-treated tantalum crucibles. Growth of 45 mm diameter and 4 mm long polycrystalline AlN boules has also been demonstrated. After high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9846b6e03f02550bb19c130380c7a72a
https://doi.org/10.1016/j.jcrysgro.2005.03.016
https://doi.org/10.1016/j.jcrysgro.2005.03.016
Autor:
T. G. Yugova, E. N. Mokhov, T.Yu. Chemekova, K. D. Scherbatchev, Heikki Helava, N. B. Smirnov, Oleg Avdeev, A. V. Govorkov, Alexander Y. Polyakov, Yu.N. Makarov, S. S. Nagalyuk
Publikováno v:
Physica B: Condensed Matter. 404:4939-4941
Structural properties, electrical properties, deep traps spectra, optical properties of bulk 50-mm-diameter AlN crystals prepared by physical vapor transport (PVT) were studied by means of X-ray diffraction, selective etching, admittance spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5ec791c60bbc14ff78607f23aaf962
https://doi.org/10.1016/j.physb.2009.09.052
https://doi.org/10.1016/j.physb.2009.09.052
Autor:
A.S. Segal, G. Huminic, O.V. Avdeev, I. S. Barash, T.Yu. Chemekova, Yu.N. Makarov, Heikki Helava, S. Davis, E. N. Mokhov, S. S. Nagalyuk, M.G. Ramm, Alexandr Dmitrievich Roenkov
Publikováno v:
physica status solidi c. 5:1612-1614
The technology of sublimation growth of 15 mm diameter bulk single AlN crystals is scaled to grow similar 2-inch diameter crystals. The best results are currently achieved with the two-stage technique including 1) seeding and initial growth of 2-3 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::815223b60ced8353e3a0e764850cab88
https://doi.org/10.1002/pssc.200778534
https://doi.org/10.1002/pssc.200778534