Zobrazeno 1 - 10
of 65
pro vyhledávání: '"T.W. Sorsch"'
Autor:
J. Feng, William M. Mansfield, R. Cirelli, Jiunn B. Heng, Avi Kornblit, V. Dimitrov, O. Dimauro, Milton Feng, J.F. Miner, T.W. Sorsch, A. Taylor, Gregory Timp, J.E. Bower, F. Klemens, E. Ferry, Kaethe Timp, R. Chan, M. Hafez
Publikováno v:
Solid-State Electronics. 52:899-908
We have fabricated and tested the performance of sub-50nm gate nMOSFETs to assess their suitability for mixed signal applications in the super high frequency (SHF) band, i.e. 3-30GHz. For a 30nm×40 μm×2 device, we found f(T) =465GHz at V(ds)=2V, V
Autor:
Chien-Shing Pai, T.W. Sorsch, E. Ferry, William M. Mansfield, R. Papazian, Daniel Lopez, Low Yee, David A. Ramsey, R. Frahm, Vladimir A. Aksyuk, E. Bower, F. Klemens, Flavio Pardo, John Vanatta Gates, R. Cirelli, Nagesh R. Basavanhally, Warren Yiu-Cho Lai, Pat G. Watson
Publikováno v:
IEEE Transactions on Advanced Packaging. 30:622-628
An ultra high-density hybrid integration for micro-electromechanical system (MEMS) mirror chips with several thousand inputs/outputs has been developed. The integration scheme involving flip-chip assembly provides electrical signal to individual mirr
Autor:
F.P. Klemens, Peter Frisella, William M. Mansfield, Anthony T. Fiory, Nuggehalli M. Ravindra, T.W. Sorsch, Aditya Agarwal, Markus Rabus, E. Ferry, J.F. Miner, R. Cirelli
Publikováno v:
Journal of Electronic Materials. 35:877-891
Fabrication of devices and circuits on silicon wafers creates patterns in optical properties, particularly the thermal emissivity and absorptivity, that lead to temperature nonuniformity during rapid thermal processing (RTP) by infrared heating metho
Autor:
Chien-Shing Pai, P.A. Busch, W.Y.C. Lai, Joseph Ashley Taylor, Hyongsok Tom Soh, Dan M. Marom, J.E. Bower, F. Klemens, R. Cirelli, Chorng-Ping Chang, Sang Hyun Oh, T.W. Sorsch, Dennis S. Greywall
Publikováno v:
Journal of Microelectromechanical Systems. 12:702-707
A new approach is presented for fabricating monolithic crystalline silicon tilting-mirror microoptoelectromechanical systems (MOEMS) devices. The activation electrodes, etched from a thick silicon layer deposited over insulating oxide onto the top su
Autor:
J.L. Grazul, M. Bude, T.W. Sorsch, Glen D. Wilk, Thierry Conard, Wilfried Vandervorst, Bert Brijs, Martin A. Green, B. W. Busch, David A. Muller, M.-Y. Ho, Petri Räisänen
Publikováno v:
Journal of Applied Physics. 92:7168-7174
A study was undertaken to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films. These were compared to films grown on hydrogen terminated Si. The use of a chemical oxide underlayer results i
Autor:
Don Monroe, Gregory Timp, Frieder H. Baumann, Yi Ma, P. J. Silverman, D. Hwang, Muhammad A. Alam, B. E. Weir, J. Bude, A. Hamad, M.M. Brown, A. Ghetti, G.D. Wilk, T.W. Sorsch
Publikováno v:
Solid-State Electronics. 46:321-328
We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown.
Autor:
S. Aravamudhan, F. Klemens, M.D. Morris, B Busch, P. J. Silverman, Martin L. Green, R. B. van Dover, G.D. Wilk, T.W. Sorsch, L. Manchanda
Publikováno v:
Microelectronic Engineering. 59:351-359
The exponential growth of the silicon industry can be attributed to that fact that silicon has a native oxide that is silicon dioxide. With SiO 2 soon approaching its fundamental limit, we must find an alternate to SiO 2 or a new switch to replace MO
Autor:
J. Eng, T.W. Sorsch, Joseph M. Rosamilia, Yves J. Chabal, Martin L. Green, Robert L. Opila, R. Masaitis, B. J. Sapjeta, T. Boone
Publikováno v:
Solid State Phenomena. :145-148
Publikováno v:
Solid State Phenomena. :169-172
Autor:
Martin L. Green, B. E. Weir, T.W. Sorsch, P. J. Silverman, David A. Muller, Y.O. Kim, S. Moccio, Gregory Timp
Publikováno v:
Microelectronic Engineering. 48:25-30
In spite of its many attributes such as nativity to silicon, low interfacial defect density, high melting point, large energy gap, high resistivity, and good dielectric strength, SiO 2 suffers from one disadvantage, low dielectric constant (K=3.9). T