Zobrazeno 1 - 3
of 3
pro vyhledávání: '"T.W. Mercier"'
Autor:
Y. Wei, M. J. Poulton, Shawn R. Gibb, K. Leverich, Jeffrey B. Shealy, Ramakrishna Vetury, T.W. Mercier, D. S. Green, P. M. Garber
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005..
We report AlGaN/GaN high-electron-mobility-transistors (HEMT) on SiC substrates with field modulation plates (FP) of various dimensions and different gate widths. As a measure of the status of GaN technology achieved in this work, small periphery 150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a77cc777bad822ec0722977139680df
https://doi.org/10.1109/mwsym.2005.1516636
https://doi.org/10.1109/mwsym.2005.1516636
Autor:
P. M. Garber, C. Greer, M. Isenhour, P. Wilkerson, David Grider, M. J. Poulton, V. Steel, R. Sadler, B. Zaroff, J. Dick, B. Sousa, Joseph Smart, J. Bonaker, M. Hamilton, T.W. Mercier, Brook Hosse, Jeffrey B. Shealy, D. Halchin, Shawn R. Gibb
Publikováno v:
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa491836764236eb0add47ab6724c20d
https://doi.org/10.1109/gaas.2002.1049069
https://doi.org/10.1109/gaas.2002.1049069
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