Zobrazeno 1 - 10
of 41
pro vyhledávání: '"T.W. MacElwee"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 23:1593-1596
A compact, efficient electrical dual-circuit topology for the representation of transient thermal coupling is presented. Based on controlled sources, the method allows an arbitrary level of complexity to be used for each self and coupled response. Tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef68954f49d4df083198374660cb840
https://doi.org/10.1109/tcad.2004.836722
https://doi.org/10.1109/tcad.2004.836722
Publikováno v:
Journal of Crystal Growth. 267:592-597
High-performance MOCVD-grown N-p-N InP/GaAsSb/InP DHBTs based on epitaxial layers deposited on 100 mm InP substrates are reported. The transistors feature the first nearly ideal emitter/base junction characteristics reported for material grown using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d2e167adfbc261f89e53a94b4e99a00
https://doi.org/10.1016/j.jcrysgro.2004.04.035
https://doi.org/10.1016/j.jcrysgro.2004.04.035
Publikováno v:
Solid-State Electronics. 46:819-826
A general model for the dependence of integrated device thermal resistance on substrate backside temperature and power dissipation for Si, InP and GaAs substrates is derived by consideration of the role of temperature dependent thermal conductivity i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10cff547502fdf244afd55dcc5970a35
https://doi.org/10.1016/s0038-1101(01)00340-9
https://doi.org/10.1016/s0038-1101(01)00340-9
Autor:
Jean Lapointe, Y. Liu, S. Rolfe, Haipeng Tang, Jennifer A. Bardwell, P. Marshall, James B. Webb, T.W. MacElwee
Publikováno v:
physica status solidi (a). 188:271-274
The growth of GaN/AIGaN high electron mobility transistor structures (HEMT) on 4H-SiC by ammonia molecular beam epitaxy (a-MBE) is reported. Structures were grown using a magnetron sputter epitaxy deposited AlN buffer layer prior to the MBE growth of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5853d43f3228c9f78c729ab8b6ced12a
https://doi.org/10.1002/1521-396x(200111)188:1<271::aid-pssa271>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<271::aid-pssa271>3.0.co
Publikováno v:
Solid-State Electronics. 44:2177-2182
High-quality GaN/AlGaN high-electron-mobility transistors (HEMT) characterized by room temperature mobilities of ∼1000 cm2 V−1 s−1 and sheet electron densities in the range of 3×1012–2×1013 cm−2 have been grown by reactive molecular-beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51836b2049990b94acef64c7a5fea433
https://doi.org/10.1016/s0038-1101(00)00198-2
https://doi.org/10.1016/s0038-1101(00)00198-2
Publikováno v:
Scopus-Elsevier
Ammonia-MBE growth techniques were developed to allow the production of AlGaN and GaN layers suitable for electronic applications on sapphire [000] substrates. DC and RF characterization of AlGaN/GaN HEMT devices have been carried out over a temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::130d68b81061cd7e00d9c1198c83660c
https://doi.org/10.4028/www.scientific.net/msf.338-342.1647
https://doi.org/10.4028/www.scientific.net/msf.338-342.1647
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:652-655
The growth of AlGaN/GaN modulation-doped field-effect transistors (MODFETs) by ammonia-molecular-beam epitaxy on sapphire substrates is reported. C-doped GaN (2 μm thick) was used as the insulating buffer layer in the device structures. The MODFET s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff22a4af24a1756618b0eeb92b5cf025
https://doi.org/10.1116/1.582255
https://doi.org/10.1116/1.582255
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:838-842
Fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors with junction-isolated back gate electrodes formed by implanting boron through the silicon film and buried oxide into lightly doped n-type separation by implantati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb87c1c36d8dc2b8bca937acb4f78c1
https://doi.org/10.1116/1.581069
https://doi.org/10.1116/1.581069
Publikováno v:
Solid-State Electronics. 38:697-701
It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂V G ∂ log 10 I D in a MOSFET may decrease significantly as gate length LG is reduced before increasing catastrophically when LG becomes so short that punc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22619604e3168d6c3060c8c2af2afa2d
https://doi.org/10.1016/0038-1101(94)00147-8
https://doi.org/10.1016/0038-1101(94)00147-8
Autor:
P. Mascher, T.W. MacElwee, S. Gujrathi, J. Wojcik, M. Flynn, I.D. Calder, B.A. Ruoux, D. Ducharme, S. Campbell, S.E. Hill
Publikováno v:
3rd IEEE International Conference on Group IV Photonics, 2006..
Silicon rich silicon oxide was deposited by ECR-PECVD, doped with Er or Tb, and processed into device structures. Electrical measurements were used to characterize conduction mechanisms while spectroscopic electroluminescence provided information on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1df36cfb5b155fbd693c72aefd8689b0
https://doi.org/10.1109/group4.2006.1708218
https://doi.org/10.1109/group4.2006.1708218