Zobrazeno 1 - 10
of 54
pro vyhledávání: '"T.V Torchinskaya"'
Publikováno v:
Thin Solid Films. 381:88-93
The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f875c820c2b4d8428afe6def8c68fae
https://doi.org/10.1016/s0040-6090(00)01351-1
https://doi.org/10.1016/s0040-6090(00)01351-1
Publikováno v:
Microelectronic Engineering. :485-493
The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55a67b9d2d333261489769630965f90
https://doi.org/10.1016/s0167-9317(99)00503-1
https://doi.org/10.1016/s0167-9317(99)00503-1
Publikováno v:
Microelectronics Reliability. 34:135-139
A complex study of injection-enhanced processes in GaP:N light emitting diodes under forward bias (I = 5–30 mA) during the first 2–5 min has been carried out. The electrical, electroluminescent methods, DLTS technique and the method of secondary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8415b5bc745ebe4483acc66818272cba
https://doi.org/10.1016/0026-2714(94)90482-0
https://doi.org/10.1016/0026-2714(94)90482-0
Autor:
T.V. Torchinskaya
Publikováno v:
Microelectronics Reliability. 33:845-857
The kinetics of the gradual degradation of red AlGaAs light-emitting diodes (LED) has been studied. This degradation has been shown to be due to diffusion of Zn atoms from the GaAs substrate to the p-n+ junction. The gradual degradation kinetics has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a221a6dc91771a723451bbd1e70de192
https://doi.org/10.1016/0026-2714(93)90258-z
https://doi.org/10.1016/0026-2714(93)90258-z
Autor:
Moissei K. Sheinkman, L.Yu. Khomenkova, Y. Goldstein, A. Many, E. Savir, T.V. Torchinskaya, Nadezhda E. Korsunskaya, B. R. Dzhumaev, B. M. Bulakh
Publikováno v:
CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389).
Photoluminescence excitation spectra consisted of two ultraviolet and one visible bands were observed. The spectra shape dependence on preparation regimes and aging in different environment show that visible excitation band is connected with light ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160edbc551fe8091411f382309c08b4e
https://doi.org/10.1109/smicnd.1999.810441
https://doi.org/10.1109/smicnd.1999.810441
Publikováno v:
Proceedings of Semiconducting and Semi-Insulating Materials Conference.
Synthetic boron-doped p-type single crystals of diamond possess a low-resistance surface layer. The photoconductivity of the bulk high-ohmic region exponentially increases with the increase of temperature. The activation energy of this dependence is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc97fd3841c088ac20ae09260563220a
https://doi.org/10.1109/sim.1996.571107
https://doi.org/10.1109/sim.1996.571107
Autor:
T.V. Torchinskaya, L.Yu. Khomenkova, Y. Goldstein, Moissei K. Sheinkman, M.Ya. Valakh, V. A. Yukhimchuk, A. Many, E. Savir, M.K. Dzhumaev, Nadezhda E. Korsunskaya, B. M. Bulakh
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
The enhancement of the Raman intensity from a porous layer compared to the signal from the silicon substrate was observed. It is assumed that this phenomenon is due to the specific form of pores that leads to the optical effect of focusing of scatter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3e8be0a3d656bf67f3edcb8e7eda60
https://doi.org/10.1109/asdam.2000.889515
https://doi.org/10.1109/asdam.2000.889515
Autor:
T.V. Torchinskaya, Nadezhda E. Korsunskaya, E. Savir, Y. Goldstein, N. P. Baran, A. Many, B. R. Dzhumaev, Larysa Khomenkova
Publikováno v:
SPIE Proceedings.
Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520e87168e6532cc6f7b1aa4101019da
https://doi.org/10.1117/12.344717
https://doi.org/10.1117/12.344717
Autor:
T.V. Torchinskaya, L. Yu. Khomenkova, B. R. Dzhumaev, Y. Goldstein, O. D. Smiyan, E. Savir, Nadezhda E. Korsunskaya
Publikováno v:
Heterostructure Epitaxy and Devices — HEAD’97 ISBN: 9780792350132
Heterostructure Epitaxy and Devices — HEAD’97
Heterostructure Epitaxy and Devices — HEAD’97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1e7e8372bae53473551560c10bdf5e0
https://doi.org/10.1007/978-94-011-5012-5_61
https://doi.org/10.1007/978-94-011-5012-5_61
Publikováno v:
SPIE Proceedings.
Using photoluminescence, photoluminescence excitation, and secondary ion mass spectroscopy (SIMS) investigations we show in this paper that two luminescence objects with different PL excitation spectra exist in PS. Two stages of photoluminescence agi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0247f2570b8fac1e4dc522f56732f9eb
https://doi.org/10.1117/12.217330
https://doi.org/10.1117/12.217330