Zobrazeno 1 - 10
of 35
pro vyhledávání: '"T.T. Fong"'
Autor:
G.R. Basawapatna, C.H. Oxley, K.F. Schunemann, R. Curby, Fwu-Jih Hsu, T.T. Fong, R. Hayashi, M.S. Gupta, M. Ohmori, K. Yamamoto, J.J. Purcell, Y. Tajima, A.M. Howard, G. Pfund, R. Kawasaki, F.N. Sechi, R.L. Camisa, R.A. Kiehl, R.V. Garver, F.E. Gardiol, H. Tohyama, R.S. Tucker, J. Stevance, Chiung-Tung Li, K. Mishima, W.R. Wisseman, G. Cachier, J. Espaignol, R.L. Bernick, Y. Asano, T. Itoh, Y. Aono, G.I. Haddad, A. Azizi, H.J. Kuno, K. Behm, C. Sun, R. Aston, J.W. Gewartowski, J.V. DiLorenzo, C.P. Snapp, H. Abe, G.K. Montress, M.E. Elta, R. Allison, T. Takada, A.K. Talwar, H. Mizuno, H.T. Buscher, J.T.C. Chen, S.R. Mazumder, P.T. Chen, J.W. Tully, R.B. Stancliff, E. Benko, P.H. Wang, K.J. Russell, T.A. Midford
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:546-554
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 24:752-758
A circuit model has been developed to describe a class of commonly used waveguide cavities for V-band IMPATT oscillators and amplifiers. Calculated results based on this model used in conjunction with theoretical small-signal IMPATT characteristics h
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:492-499
High-power millimeter-wave pulsed MPATT sources have found a variety of applications as solid-state transmitters in RADAR applications. These applications have been greatly enhanced by the rapidly advancing millimeter-wave technology of which the hig
Autor:
T.T. Fong, Shung-Wu Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 22:776-783
A novel planar waveguide which is suitable for guiding electromagnetic (EM) energy in the millimeter-wave and submillimeter- wave regions is studied. By using Wiener-Hopf techniques, we first determine the reflection coefficient at the open ends of t
Publikováno v:
IEEE Transactions on Electron Devices. 19:752-757
In order to evaluate the quality of a microwave device and to design a suitable circuit for it, the device must be characterized in terms of an equivalent circuit. At low microwave frequencies L through X bands, devices can be characterized in a rela
Publikováno v:
S-MTT International Microwave Symposium Digest.
X-band n+p TRAPATT diodes have been fabricated and have shown better performance than their p+n complement. The low threshold power densities required to achieve the high efficiency oscillation have greatly enhanced their high duty and CW operation.
Autor:
T.T. Fong
Publikováno v:
1987 IEEE MTT-S International Microwave Symposium Digest.
The maturity of millimeter wave solid state components, particularly in the developments based on integrated circuits, has significantly enhanced the implementations of small lightweight radars in missile guidance and helicopter and tank fire control
Publikováno v:
S-MTT International Microwave Symposium Digest.
A modal analysis based on the transverse resonance concept is presented for a planar dielectric strip waveguide which exhibits good guiding properties and is particularly applicable to millimeter-wave integrated circuits. Numerical results are given
Publikováno v:
1971 IEEE GMTT International Microwave Symposium Digest.
A new, improved characterization technique for evaluating semiconductor devices at millimeter-wave frequencies is described. By this technique both passive and active parameters of the device (e.g. , series resistance, junction capacitance, negative
Publikováno v:
Proceedings of the IEEE. 62:287-288
Complementary n+-p junction TRAPATT diodes have been fabricated for C-band operation. Peak power output as high as 27 W with 42.5-percent efficiency has been achieved at 7.2 GHz.