Zobrazeno 1 - 10
of 138
pro vyhledávání: '"T.T. Cheng"'
Publikováno v:
Interface Science. 12:293-302
The interfacial defect content of lamellar interfaces in Ti aluminide alloys has been evaluated by HREM and the data analysed using the Topological Theory of Interfacial Defects. It has been found that the defects observed are all perfect interfacial
Publikováno v:
Acta Materialia. 52:191-197
The onset of the lamellar decomposition (α⇒α2+γ) in a titanium aluminide alloy containing Nb and Zr has been studied by transmission electron microscopy. Samples water-quenched from the solution-treatment temperature of 1350 °C show fault-like
Publikováno v:
Philosophical Magazine Letters. 80:1-10
The defect character of steps on lamellar γ-α2 interfaces in a ternary TiAl-based alloy has been studied using high-resolution transmission electron microscopy. Most of the steps are identical to those observed previously in a low-misfit quinternar
Publikováno v:
Scripta Materialia. 40:283-288
There has been considerable interest over the past few years in {gamma}-TiAl based alloys since they offer a combination of low density and useful mechanical properties at temperatures higher than those possible with conventional titanium alloys. How
Autor:
T.T Cheng, M.R Willis
Publikováno v:
Scripta Materialia. 39:1255-1265
Post heat treatment aging has been recognized to be beneficial in improving the mechanical properties of many near {gamma}-TiAl alloys. In this study, the authors examine the impact of a 5h, 900 C post heat treatment aging on the microstructure and c
Autor:
M.H. Loretto, T.T. Cheng
Publikováno v:
Acta Materialia. 46:4801-4819
The decomposition of the beta phase has been studied in Ti–44Al–8Nb and Ti–44Al–4Nb–4Zr–0.2Si alloys cooled from the (α+β) phase field using TEM and SEM. The morphology of the transformation products is shown to be sensitive to cooling
Publikováno v:
Journal of Crystal Growth. 159:1096-1099
Cross-sectional TEM studies of Cd x Hg 1− x Te layers grown by the interdiffused multilayer process have shown that the microstructures can be related to the diffusion mechanisms during the annealing. Layers on CdTe buffers on GaAs contain extrinsi
Publikováno v:
Journal of Crystal Growth. 135:409-422
A cross-sectional transmission electron microscopy study has been performed on the microstructure of CdTe epitaxial buffer layers, which were grown upon 2°-off (001) GaAs substrates by metalorganic chemical vapour deposition (MOCVD). The substrates
Publikováno v:
Journal of Crystal Growth. 133:168-174
Atomic force microscopy and transmission electron microscopy have been used to investigate the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs. There is a bimodal dist
Publikováno v:
Journal of Power Sources. 44:709-712
An improved MnO 2 cathode has been evaluated. It was found that the high porosity and the pore-size distribution (macropores with a diameter > 2000 A representing >25% of the total pore volume) of the electrode are two determinant factors in performi