Zobrazeno 1 - 10
of 90
pro vyhledávání: '"T.S. Noggle"'
Publikováno v:
Journal of Nuclear Materials. 71:160-170
Transmission electron microscopy techniques have been used to study dislocation loop type damage as a function of depth in copper single crystals irradiated with MeV Cu, Ni and He ions at room temperature. By comparing the location of the peak in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f7babf8f210451df4181b31a363c46
https://doi.org/10.1016/0022-3115(77)90200-8
https://doi.org/10.1016/0022-3115(77)90200-8
Publikováno v:
Journal of Nuclear Materials. 125:330-341
Resistivity damage rates as a function of ion penetration depth were measured for 2.7 to 5.4 MeV Al ions in aluminium. These damage rates accurately scale with damage energy calculations for a large fraction of the range of the ions, but are ~14% low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e20677758df8479d89e7abd3c05a8e8
https://doi.org/10.1016/0022-3115(84)90561-0
https://doi.org/10.1016/0022-3115(84)90561-0
Publikováno v:
Physical Review Letters. 48:337-340
Time-resolved x-ray diffraction measurements of lattice strain in silicon during pulsed-laser annealing have been made with nanosecond resolution by using synchrotron radiation. Analyses of the strain in pure and boron-implanted silicon in terms of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd60655e62d10cc8028ef93079e65c8
https://doi.org/10.1103/physrevlett.48.337
https://doi.org/10.1103/physrevlett.48.337
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:2135-2139
Amorphous, polycrystalline, and epitaxial thin films of Si and Ge have been grown by ion beam deposition (IBD) under ultrahigh‐vacuum conditions. IBD involves the direct deposition of ions onto single‐crystal substrates from mass‐ and energy‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db0f4e502ed2d9c95c75fe399aedef3f
https://doi.org/10.1116/1.574935
https://doi.org/10.1116/1.574935
Publikováno v:
Surface Science. 41:601-606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b82c95be2ecea9cbe7f19a0bfe37ce6
https://doi.org/10.1016/0039-6028(74)90077-6
https://doi.org/10.1016/0039-6028(74)90077-6
Autor:
L. H. Jenkins, J. W. Miller, Bill R. Appleton, D. M. Zehner, T.S. Noggle, J.H. Barrett, O. E. Schow
Publikováno v:
Journal of Vacuum Science and Technology. 12:454-457
An extensive investigation of the atomic arrangement on the (001) Au surface has been performed using the techniques of positive−ion−channeling spectroscopy (PICS), LEED, and AES. Both the normal surface in which the Au atoms are ordered in a squ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d063b7a5bbde4f30e7990bed485543f
https://doi.org/10.1116/1.568600
https://doi.org/10.1116/1.568600
Publikováno v:
Journal of Nuclear Materials. :797-800
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e4b677d6124fbd11091eb7cbf38831
https://doi.org/10.1016/0022-3115(78)90345-8
https://doi.org/10.1016/0022-3115(78)90345-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :16-21
Ion beam deposition (IBD) is the direct formation of thin films using a low-energy (tens of eV) mass-analyzed ion beam. The process allows depositions in which the energy, isotopic species, deposition rate, defect production, and many other beam and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339f1f8de81cb4ecc610caba9fd6421f
https://doi.org/10.1016/0168-583x(89)90129-8
https://doi.org/10.1016/0168-583x(89)90129-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :975-982
Direct ion beam deposition (IBD) is utilized to deposit isotopic thin films and heterostructures and to achieve high-quality epitaxial growth of 74Ge on Ge(100) and 30Si on Si(100) at temperatures as low as 400°C. Anomalous damage is observed during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46b84354e37f4efec0d9f121b4e9efa2
https://doi.org/10.1016/s0168-583x(87)80195-7
https://doi.org/10.1016/s0168-583x(87)80195-7
Autor:
Sheldon Datz, C. D. Moak, J. A. Biggerstaff, M. D. Brown, H.F. Krause, Bill R. Appleton, T.S. Noggle
Publikováno v:
Physical Review B. 10:2681-2686
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92664af2720f24b6cba0c9f38a7745ab
https://doi.org/10.1103/physrevb.10.2681
https://doi.org/10.1103/physrevb.10.2681