Zobrazeno 1 - 10
of 28
pro vyhledávání: '"T.S Duh"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 241:655-659
In recent years SPECT radioisotope producers have generally built their businesses around 30 MeV cyclotrons. An important aspect of these production facilities is the beamline system which must have a high transmission rate, low residual radiation, a
Autor:
T.S Duh, Akira Kohyama, C.W Chen, K.M Yin, Yutai Katoh, P.C Fang, Fu-Rong Chen, J.Y Yan, Ji-Jung Kai
Publikováno v:
Journal of Nuclear Materials. :518-523
The formation of helium bubbles in the advanced SiC composites, Tyranno-SA SiC/PyC/β-SiC (TSA) and Hi-Nicalon Type-S SiC/PyC/β-SiC (HNS), implanted with helium and irradiated by dual-beam was investigated. Post-implantation annealing was carried ou
Publikováno v:
Radiation Physics and Chemistry. 68:681-688
The production of Thallium-201 via the 203 Tl(p,3n) 201 Pb→ 201 Tl process in the compact cyclotron TR30/15 of the Institute of Nuclear Energy Research (INER) was evaluated based on excitation functions. This study involves a selection of a series
Publikováno v:
Journal of Nuclear Materials. 294:267-273
The purpose of this study is to develop a model to describe the effects of the grain boundary misorientation on the radiation-induced solute segregation (RIS) in 304 stainless steels. A simple rate equation model with modified boundary conditions, wh
Publikováno v:
Journal of Nuclear Materials. :198-204
The purpose of this study is to investigate the effects of the grain boundary misorientation on the radiation-induced segregation (RIS) in 304 stainless steels. There were four test conditions for the specimens: (1) as-received (AR) with enriched Cr
Publikováno v:
IEEE Microwave and Wireless Components Letters. 12:429-431
We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-/spl mu
Publikováno v:
2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846).
A /spl pi/ technology (= particle-enhanced isolation) was proposed to employ energetic proton beams on the already-manufactured mixed-mode IC wafers (prior to packaging) for the suppression of undesirable substrate coupling (C. P. Liao et al., April
Publikováno v:
60th DRC. Conference Digest Device Research Conference.
We report a very simple process to fabricate high performance filters on Si at 40 GHz using H/sup +/ implantation. The filter has only -3.4 dB loss at peak transmission of 40 GHz with a broad 9 GHz bandwidth, which are the best filter results on Si a
Autor:
D.S. Su, T.S Duh, S.C. Lee, Ping-Kun Teng, I.M. Gregor, Ming-Lee Chu, P.S Song, T. Weidberg, L.S. Hou
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 497(2-3)
Studies have been performed on the radiation hardness of the type of VCSELs 2 that will be used in the ATLAS SemicConductor Tracker. The measurements were made using 30 MeVproton beams, 24 GeV /c proton beams and a gamma source. The lifetime of the d
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
High performance antennas have been realized on proton-implanted Si with 10/sup 6/ /spl Omega/-cm resistivity. Sharp antenna resonance and low loss up to 20 GHz are observed indicating excellent antenna quality. In contrast, very poor antenna charact