Zobrazeno 1 - 10
of 44
pro vyhledávání: '"T.P.E. Broekaert"'
Autor:
Joseph F. Jensen, Charles H. Fields, T.P.E. Broekaert, Binqiang Shi, D.L. Persechini, Y.K. Brown-Boegeman, R.H. Walden, D. Yap, S. Bourgholtzer
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1335-1342
A monolithically integrated optical receiver and a 4-bit flash analog-to-digital converter, all in InP HBT technology, have been implemented. The optical receiver converts an incoming optical pulse train into an electronic signal and is functional up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bedea8ea60a300eb66f5c8f2a83710a5
https://doi.org/10.1109/4.944660
https://doi.org/10.1109/4.944660
Publikováno v:
IEEE Transactions on Electron Devices. 46:55-62
We propose and demonstrate a resonant-tunneling diode (RTD) based memory cell in which N bits are stored in a series combination of N RTDs without internal node contacts. The slew rate of an applied voltage signal determines the circuit switching dyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cbb554113d731ad74eab4a41e4b530
https://doi.org/10.1109/16.737441
https://doi.org/10.1109/16.737441
Autor:
Bobby Brar, Alan Seabaugh, Theodore S. Moise, E.A. Beam, Francis J. Morris, Gary A. Frazier, T.P.E. Broekaert, J.P.A. van der Wagt
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1342-1349
The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d29b053006ea765a99e271cac73b2ee
https://doi.org/10.1109/4.711333
https://doi.org/10.1109/4.711333
Publikováno v:
Journal of Applied Physics. 78:6305-6317
Through the use of a novel vertically integrated resonant‐tunneling diode (RTD) heterostructure we have established experimentally the relationship between intentional variations in the structural parameters of the pseudomorphic In0.53Ga0.47As/AlAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3908ac1d323a3dcbf2b1c2d01dda062
https://doi.org/10.1063/1.360511
https://doi.org/10.1063/1.360511
Publikováno v:
Applied Physics Letters. 69:1918-1920
A planar integrated lateral double barrier heterostructure resonant tunneling diode is demonstrated. Resonances in the current–voltage (I–V) characteristics are observed that have peak‐to‐valley current ratios as high as 3.5 at 4.2 K and are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b3b10c899f951487c09e88761de1342
https://doi.org/10.1063/1.117621
https://doi.org/10.1063/1.117621
Autor:
R. Thiagarajah, R. Coccioli, J. Rogers, K. Nary, E. Arnold, S. Yinger, T.P.E. Broekaert, N. Srivastava, J. Sanders, P. van der Wagt, S. Zheng
Publikováno v:
2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.04CH37525).
50Gb/s 3.3V InP-HBT logic ICs with 6ps rise time and 1200mVpp output swing include: D-flip-flop, double-edge triggered flip-flop, dividers, a frequency doubler, XOR/OR gates, and a 1:2 fanout buffer. The DFF has 3ps/sub pp/ deterministic and 270deg p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2234dc8eccc46d79fb78f9fb2fe08b
https://doi.org/10.1109/vlsic.2004.1346604
https://doi.org/10.1109/vlsic.2004.1346604
Autor:
T.P.E. Broekaert, Z.M. Nosal
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2003.
Transimpedance amplifiers with the bandwidth in the 50 GHz range for applications in long haul optical networks are presented. Transimpedance value is in the 220 to 300 /spl Omega/ range, integrated input noise current /spl ap/ 7.5 - 8.5 /spl mu/A (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f22fa9bdce18b4a8c2c939a63e96325
https://doi.org/10.1109/mwsym.2003.1210896
https://doi.org/10.1109/mwsym.2003.1210896
Publikováno v:
Great Lakes Symposium on VLSI
The inherent bistability and picosecond time-scale switching of the resonant tunneling diode (RTD) provides an ideal element for the design of digital circuits and analog signal quantizers in the 10-100 GHz domain. New differential RTD-based circuits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2be02cb0fd00c35c97620af010268c
https://doi.org/10.1109/glsv.1999.757392
https://doi.org/10.1109/glsv.1999.757392
Autor:
C.G. Fonstad, T.P.E. Broekaert
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A fundamental objective in the design of resonant tunneling diodes for microwave oscillators and digital switching is the achievement of the highest possible peak current density at the lowest possible peak voltage, while maintaining a high peak-to-v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47e031693085d92679f959ee03c797b
https://doi.org/10.1109/iedm.1989.74344
https://doi.org/10.1109/iedm.1989.74344
Publikováno v:
1996 54th Annual Device Research Conference Digest.
We propose and demonstrate a new resonant-tunneling diode (RTD) based memory cell in which bits are stacked vertically while their addressing requires only two physical contacts to the vertically integrated RTDs (VIRTDs). Toward meeting the ultra low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6650b11501597001c5f9b0391ef4612f
https://doi.org/10.1109/drc.1996.546422
https://doi.org/10.1109/drc.1996.546422