Zobrazeno 1 - 10
of 84
pro vyhledávání: '"T.P. Chin"'
Autor:
M. Lange, Lorene Samoska, William R. Deal, X.B. Mei, Y.M. Kim, W. Yoshida, J. Lee, J. Uyeda, Jennifer Wang, A. Fung, Vesna Radisic, Richard Lai, L. Dang, W. Liu, T. Gaier, D. Li, Michael E. Barsky, T.P. Chin, Po-Hsin Liu
Publikováno v:
IEEE Electron Device Letters. 28:470-472
rdquoWe report the first submillimeter-wave monolithic microwave integrated circuit (MMIC) amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency MMIC amplifier reported to date. In this letter, a 35-nm InP high-ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a353e7f588ad094828198f7b3caee7fa
https://doi.org/10.1109/led.2007.896897
https://doi.org/10.1109/led.2007.896897
Autor:
T.R. Block, Y.C. Chen, G. Schreyer, Ronald W. Grundbacher, Richard Lai, V. Medvedev, M. Nishimoto, D. Yamauchi, D.C. Streit, T.P. Chin
Publikováno v:
IEEE Microwave and Guided Wave Letters. 9:236-238
We report state-of-the-art V-band power performance of 0.15-/spl mu/m gate length InGaAs-InAlAs-InP HEMTs. The 500-/spl mu/m periphery InP HEMTs were measured in fixture at 60 GHz and demonstrated an output power of 162 mW (22.1 dBm) with 39% power-a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caca1fa5e05ebb43ca1133155ab2f080
https://doi.org/10.1109/75.769532
https://doi.org/10.1109/75.769532
Autor:
R. Lai, Vesna Radisic, P.H. Liu, W. Liu, M. Lange, W. Yoshida, J. Uyeda, L. Dang, William R. Deal, Michael E. Barsky, J. Lee, D. Li, T.P. Chin, Y.M. Kim, J. Wang, X.B. Mei
Publikováno v:
2008 20th International Conference on Indium Phosphide and Related Materials.
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb98a231e8c8e55929041a00a492011
https://doi.org/10.1109/iciprm.2008.4702935
https://doi.org/10.1109/iciprm.2008.4702935
Autor:
C.H. Lin, Michael E. Barsky, M. Y. Nishimoto, M. Lange, T.P. Chin, Y.C. Chou, Richard Lai, Aaron K. Oki, Peter Nam, Jeffrey M. Yang, J.B. Boos, Nicolas A. Papanicolaou, J. Lee, A. Gutierrez, Mike Wojtowicz, B. R. Bennett, Roger S. Tsai
Publikováno v:
2007 IEEE Compound Semiconductor Integrated Circuits Symposium.
A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ba968e183d62206c094636c3d34d7e
https://doi.org/10.1109/csics07.2007.48
https://doi.org/10.1109/csics07.2007.48
Autor:
P.H. Liu, J. Wang, J. Uyeda, W. Liu, M. Lange, X.B. Mei, L. Dang, Todd Gaier, Y.M. Kim, T.P. Chin, Vesna Radisic, A. Fung, R. Lai, William R. Deal, Michael E. Barsky, W. Yoshida, J. Lee, D. Li
Publikováno v:
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.
We have recently developed a sub-50nm gate length InP HEMT (high electron mobility transistor) process with a peak transconductance of 2000 mS/mm at 1V. A 3-stage single-ended common source 150-220 GHz MMIC LNA demonstrates greater than 20 dB gain at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00d3c770b3691dfb8ba6972efd607c6c
https://doi.org/10.1109/iciprm.2007.380679
https://doi.org/10.1109/iciprm.2007.380679
Autor:
L.J. Lee, Brian R. Bennett, C.H. Lin, M.D. Lange, D.S. Farkas, T.P. Chin, R. Tsai, Nicolas A. Papanicolaou, C. Chou, A. Oki, J.B. Boos, Mike Wojtowicz, P.S. Nam, A. Gutierrez, J. M. Yang
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A 0.1 μm In02Al08Sb-InAs HEMT MMIC technology was developed for phased-array applications with ultralow-power and oxidation-free requirements. An In02Al08Sb layer was utilized to replace the upper AlSb layer in the conventional AlSb-InAs HEMT in ord
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9a57e31fdfba57e6c6603b1abcac7bb
https://doi.org/10.1109/iedm.2007.4419015
https://doi.org/10.1109/iedm.2007.4419015
Publikováno v:
IEEE Electron Device Letters. 19:118-120
Fabrication of fully self-aligned heterojunction bipolar transistors (HBTs) by selective emitter regrowth is described. Scaled devices with emitter dimensions as small as 0.4/spl times/7 /spl mu/m/sup 2/ demonstrate current gain up to 29, with succes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572bcb4463a55030420311b6ba8a8843
https://doi.org/10.1109/55.663533
https://doi.org/10.1109/55.663533
Publikováno v:
52nd Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95246f7578aa2060f06fb7f2d05e10e
https://doi.org/10.1109/drc.1994.1009428
https://doi.org/10.1109/drc.1994.1009428
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::579f214f18bc13cd4bf5b1e474c32911
https://doi.org/10.1109/leosst.1991.638918
https://doi.org/10.1109/leosst.1991.638918
Autor:
T.P. Chin, D.C. Streit, D. Yamauchi, M. Nishimoto, V. Medvedev, Ronald W. Grundbacher, Richard Lai, G. Schreyer, Y.C. Chen, T.R. Block
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
We present state-of-the-art V-band power added efficiency (PAE) and power performance of 0.15 /spl mu/m gate length InGaAs-InAlAs-InP HEMTs. The 500 /spl mu/m wide InP HEMTs were measured in a fixture under CW conditions at 60 GHz and demonstrated 36
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af850a9d92bca36ddc50ecb19974e167
https://doi.org/10.1109/iciprm.1999.773696
https://doi.org/10.1109/iciprm.1999.773696