Zobrazeno 1 - 10
of 52
pro vyhledávání: '"T.N.D Tibbits"'
Autor:
T.N.D. Tibbits, David Lackner, Frank Dimroth, Stefan Heckelmann, Alexandre W. Walker, Andreas W. Bett
Publikováno v:
Solar Energy Materials and Solar Cells. 168:234-240
The radiation hardness of AlGaAs single-junction solar cells is investigated for various n-i-p solar cell designs. The material composition in both the n-p regions is varied between 3.5% and 16% Al-content, whereas the intrinsic region has a higher A
Autor:
Gerald Siefer, Aurélie Tauzin, Andreas Bett, M. Niemeyer, Christian Karcher, Felix Predan, Frank Dimroth, T.N.D. Tibbits, Peter Fus-Kailuweit, E. Oliva, Thomas Signamarcheix, Rainer Krause, Paul Beutel, Jocelyne Wasselin, David Lackner, Eric Guiot, Charlotte Drazek
Publikováno v:
IEEE Journal of Photovoltaics
The highest solar cell conversion efficiencies are achieved with four-junction devices under concentrated sunlight illumination. Different cell architectures are under development, all targeting an ideal bandgap combination close to 1.9, 1.4, 1.0, an
Autor:
C. Calder, J.S. Roberts, T. Grantham, Keith W. J. Barnham, A. Pakes, R. J. Airey, G. Hill, D.C. Johnson, M.C. Lynch, T.N.D. Tibbits
Publikováno v:
Journal of Crystal Growth. 298:754-757
A touch-screen controlled, robot-loading system for the Thomas Swan 7×2 flip-top showerhead reactor has been developed. The reactor has been configured for the growth of GaAs and InP materials and has been used to prepare strain-balanced MQW (SBMQW)
Autor:
Hubert Moriceau, Thomas Signamarcheix, Tarik Chaira, Charlotte Drazek, Bruno Imbert, Aurélie Tauzin, Frank Fournel, Paul Beutel, Shay Reboh, Julien Duvernay, Emmanuelle Lagoutte, Cedric Charles-Alfred, Christophe Lecouvey, Y. Bogumilowicz, T.N.D. Tibbits, Eric Guiot, V. Carron, Frank Dimroth, Jude Guelfucci, Bruno Ghyselen, Thierry Salvetat, F.P. Luce
Publikováno v:
AIP Conference Proceedings.
A photovoltaics conversion efficiency of 46% at 508 suns concentration was recently demonstrated with a four-junction solar cell consisting in a GaAs-based top tandem cell transferred onto an InP-based bottom tandem cell, by means of wafer bonding. W
Autor:
Ian Ballard, G. Hill, A. Ioannides, J.S. Roberts, T.N.D. Tibbits, A. Bessiere, Massimo Mazzer, C. Calder, Keith W. J. Barnham, M.C. Lynch, D.C. Johnson
Publikováno v:
Thin solid films
511-512 (2006): 76–83. doi:10.1016/j.tsf.2005.12.120
info:cnr-pdr/source/autori:Mazzer M, Barnham KWJ, Ballard IM, Bessiere A, Ioannides A, Johnson DC, Lynch MC, Tibbits TND, Roberts JS, Hill G, Calder C/titolo:Progress in quantum well solar cells/doi:10.1016%2Fj.tsf.2005.12.120/rivista:Thin solid films (Print)/anno:2006/pagina_da:76/pagina_a:83/intervallo_pagine:76–83/volume:511-512
511-512 (2006): 76–83. doi:10.1016/j.tsf.2005.12.120
info:cnr-pdr/source/autori:Mazzer M, Barnham KWJ, Ballard IM, Bessiere A, Ioannides A, Johnson DC, Lynch MC, Tibbits TND, Roberts JS, Hill G, Calder C/titolo:Progress in quantum well solar cells/doi:10.1016%2Fj.tsf.2005.12.120/rivista:Thin solid films (Print)/anno:2006/pagina_da:76/pagina_a:83/intervallo_pagine:76–83/volume:511-512
A quantum well solar cell is a special multiple-band gap device with intermediate properties between heterojunction cells (sum of the currents generated in the different materials but voltage controlled by the lowest of the two band gaps) and tandem
Autor:
G. Hill, J.S. Roberts, Ian Ballard, D.C. Johnson, M.C. Lynch, Nicholas J. Ekins-Daukes, R. J. Airey, T.N.D. Tibbits, James P. Connolly, Keith W. J. Barnham, D.B. Bishnell, Massimo Mazzer
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2005, 87 (1-4), pp.169-179. ⟨10.1016/j.solmat.2004.09.014⟩
Solar energy materials and solar cells 87 (2005): 169–179.
info:cnr-pdr/source/autori:Johnson D.C., Ballard I., Barnham K.W.J., Bishnell D.B., Connolly J.P., Lynch M.C., Tibbits T.N.D., Ekins-Daukes N.J., Mazzer M., Airey R., Hill G., Roberts J.S./titolo:Advances in Bragg stack quantum well solar cells/doi:/rivista:Solar energy materials and solar cells/anno:2005/pagina_da:169/pagina_a:179/intervallo_pagine:169–179/volume:87
Solar Energy Materials and Solar Cells, Elsevier, 2005, 87 (1-4), pp.169-179. ⟨10.1016/j.solmat.2004.09.014⟩
Solar energy materials and solar cells 87 (2005): 169–179.
info:cnr-pdr/source/autori:Johnson D.C., Ballard I., Barnham K.W.J., Bishnell D.B., Connolly J.P., Lynch M.C., Tibbits T.N.D., Ekins-Daukes N.J., Mazzer M., Airey R., Hill G., Roberts J.S./titolo:Advances in Bragg stack quantum well solar cells/doi:/rivista:Solar energy materials and solar cells/anno:2005/pagina_da:169/pagina_a:179/intervallo_pagine:169–179/volume:87
Strain-balanced quantum well solar cells (SB-QWSC) extend the photon absorption edge beyond that of bulk GaAs by incorporation of quantum wells in the i-region of a p–i–n device. The addition of a distributed Bragg reflector (DBR) can substantial
Autor:
James P. Connolly, G. Hill, T.N.D. Tibbits, Massimo Mazzer, Ian Ballard, R. J. Airey, Nicholas J. Ekins-Daukes, D.B. Bushnell, D.C. Johnson, J.S. Roberts, Keith W. J. Barnham, M.C. Lynch
Publikováno v:
Journal of materials science 40 (2005): 1445–1449.
info:cnr-pdr/source/autori:Lynch M.C., Ballard I.M., Bushnell D.B., Connolly J.P., Johnson D.C., Tibbits T.N.D., Barnham K.W.J., Ekins-Daukes N.J., Roberts J.S., Hill G., Airey R., Mazzer M./titolo:Spectral response and I-V characteristics of large well number multi quantum well solar cells/doi:/rivista:Journal of materials science/anno:2005/pagina_da:1445/pagina_a:1449/intervallo_pagine:1445–1449/volume:40
Journal of Materials Science
Journal of Materials Science, Springer Verlag, 2005, 40 (6), pp.1445-1449. ⟨10.1007/s10853-005-0580-4⟩
info:cnr-pdr/source/autori:Lynch M.C., Ballard I.M., Bushnell D.B., Connolly J.P., Johnson D.C., Tibbits T.N.D., Barnham K.W.J., Ekins-Daukes N.J., Roberts J.S., Hill G., Airey R., Mazzer M./titolo:Spectral response and I-V characteristics of large well number multi quantum well solar cells/doi:/rivista:Journal of materials science/anno:2005/pagina_da:1445/pagina_a:1449/intervallo_pagine:1445–1449/volume:40
Journal of Materials Science
Journal of Materials Science, Springer Verlag, 2005, 40 (6), pp.1445-1449. ⟨10.1007/s10853-005-0580-4⟩
The inclusion of quantum wells in p-i-n solar cells leads to both an increase in photocurrent and a reduction in open circuit voltage. It has been shown that up to 50 shallow strain-balanced GaAsP/InGaAs quantum wells can be inserted into a GaAs cell
Autor:
T.N.D. Tibbits, Thomas Hannappel, Michael Schachtner, Marc Steiner, Maike Wiesenfarth, Eckart Gerster, Andreas W. Bett, Nicolas Blanc, E. Oliva, Thomas Signamarcheix, A. Wekkeli, Thierry Salvetat, M. Piccin, Gerald Siefer, Frank Dimroth, Jocelyne Wasselin, Christian Karcher, Chantal Arena, Aurélie Tauzin, Rainer Krause, Paul Beutel, Eric Guiot, Charlotte Drazek, Miguel Munoz Rico
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
The next generation of multi-junction concentrator solar cells will have to reach higher efficiencies than today's devices. At the same time these solar cells must be reliable in the field, be manufacturable with good yield and at sufficiently low co
Autor:
G. Hill, D.B. Bushnell, R. J. Airey, Massimo Mazzer, Carsten Rohr, Ned Ekins-Daukes, Paul Abbott, J.S. Roberts, Jenny Nelson, James P. Connolly, T.N.D. Tibbits, Ian Ballard, Keith W. J. Barnham
Publikováno v:
Journal of Materials Science: Materials in Electronics. 11:531-536
This review starts with the modelling of dark-currents in lattice-matched quantum well cells. We discuss an unexpected result obtained by extending studies of radiative recombination in single wells in the dark to light biased measurements. New resul
Autor:
Ta-Chung Wu, T.N.D. Tibbits, Victoria Rees, Jan-Gustav Werthen, Jon Lacey, Gianluca Bacchin, James Liu, Jane Tsai, Xiaodong Chen, Ben Browne
Publikováno v:
AIP Conference Proceedings.
III-V InGaP/InGaAs/Ge triple junction solar cells have been developed which incorporate quantum wells into the InGaAs and InGaP junctions. Characterization of such devices shows an absolute efficiency gain of up to 2% with Voc exceeding that of non-Q