Zobrazeno 1 - 10
of 87
pro vyhledávání: '"T.M. Shen"'
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Trap generation under BTI/TDDB stress for extremely scaled NMOSFETs and PMOSFETs is investigated. Trap identification and localization using SILC Spectrum technique is demonstrated. It has been verified that BTI/TDDB stress leads to trap generation p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20a78b95ccda39c1bcd8e1feb8c59954
https://doi.org/10.1109/irps.2016.7574596
https://doi.org/10.1109/irps.2016.7574596
Autor:
T.F. Chen, D. Gitlin, W.M. Wang, L.Y. Tung, H.L. Meng, C.T. Tsai, S.C. Chiang, B.C. Lan, T.M. Shen, C.H. Tsai, Y.C. Liu, J.W. Pan, D. Nayak, C.J. Lee, W.T. Chang, Y.A. Chen, P.W. Liu, Yuhao Luo, C.H. Tung, L.W. Cheng, H.L. Shih, T.Y. Chang, M.F. Lu
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
For the first time, 75% and 7% drive current improvement is simultaneously achieved in both N/PMOS by adopting ultimate spacer process (USP) with a single stress liner. High out-of-plane stress in the channel accounts for the simultaneously enhanced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a6a9041ba88892453694b562d560c20
https://doi.org/10.1109/iedm.2005.1609486
https://doi.org/10.1109/iedm.2005.1609486
Autor:
Y.S. Hsieh, G. Braithwaite, J.H. Ho, J.K. Chen, C.C. Huang, Ming-Ren Lin, N. Gerrish, Y.T. Loh, F. Singaporewala, Ariel Liu, W.T. Shiau, Y.Y. Chiang, J.R. Hwang, Richard Hammond, H.K. Lee, Mayank T. Bulsara, T.P. Chen, S.C. Chien, T.M. Shen, M. Currie, Qi Xiang, S.M. Ting, F. Wen, A. Lochtefeld
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
An 86% electron mobility improvement and over 20% I/sub dn-sat/ enhancement were demonstrated for a 70 nm strained-Si CMOS process fabricated on SiGe virtual substrates. Compared to a bulk-Si CMOS process, the strained-Si process delivered 95% higher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2509726fa79ce52f08a712f14e188723
https://doi.org/10.1109/vlsit.2003.1221107
https://doi.org/10.1109/vlsit.2003.1221107
Publikováno v:
IEEE Photonics Technology Letters. 2:920-922
A multiple-quantum-well distributed-feedback (MQW-DFB) laser with narrow linewidth and low frequency chirp at low output power may experience linewidth rebroadening at high output power. the rebroadening is mostly due to a large carrier-induced chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be096939713529f7e085672958ceb8db
https://doi.org/10.1109/68.62030
https://doi.org/10.1109/68.62030
Conference
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Publikováno v:
Acta Horticulturae. :71-74
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d76a1d36d854f25c4632e7faebbbb60d
https://doi.org/10.17660/actahortic.1987.205.11
https://doi.org/10.17660/actahortic.1987.205.11
Publikováno v:
IEEE Photonics Technology Letters. 1:258-260
Reports that the etched-mesa buried-heterostructure distributed-feedback lasers ( lambda = 1.3 mu m) fabricated using semi-insulating InP blocking lasers have bandwidths in the 12-17 GHz range at 20 degrees C. 15 mW (18 GHz at 20 mW). The bandwidth d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6044a69b6ada7785577c23179ceff839
https://doi.org/10.1109/68.43338
https://doi.org/10.1109/68.43338
Publikováno v:
Applied Physics Letters. 46:1036-1038
The fabrication and performance characteristics of InGaAsP (λ∼1.3 μm) double channel planar buried heterostructure lasers with multiquantum well (MQW) active layers are reported. The MQW structure has λg∼1.3 μm InGaAsP active wells and λg∼
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ddbfc0a90a865279f600c0211fc5002
https://doi.org/10.1063/1.95750
https://doi.org/10.1063/1.95750
Publikováno v:
Applied Physics Letters. 46:19-21
We report the fabrication and performance characteristics of InGaAsP double channel planar buried heterostructure (DCPBH) lasers with multiquantum well active layers emitting at 1.3 μm. These lasers have threshold currents in the range 40–50 mA at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::233084e7a9b1e9018453c78ad45ed444
https://doi.org/10.1063/1.95835
https://doi.org/10.1063/1.95835
Autor:
E. G. Burkhardt, Y. Twu, Niloy K. Dutta, T.M. Shen, John E. Bowers, S. G. Napholtz, Daniel Paul Wilt, Won-Tien Tsang, R. A. Logan, J. A. Ditzenberger
Publikováno v:
Journal of Applied Physics. 63:1218-1220
GaInAsP/InP double heterostructures grown by chemical‐beam epitaxy have been used in conjunction with liquid‐phase‐epitaxial regrowth to fabricate high‐performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e99ba1ebca8bfba7371e3ef3d2f8316
https://doi.org/10.1063/1.339984
https://doi.org/10.1063/1.339984