Zobrazeno 1 - 10
of 35
pro vyhledávání: '"T.M. Mazur"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 24, Iss 3, Pp 495-498 (2023)
A comparative analysis of the edge absorption spectra measured in the temperature range of 290–470 K for two types of zinc selenide substrates has been carried out. It has been established that the self-absorption edge of pure ZnSe: Yb melt crystal
Externí odkaz:
https://doaj.org/article/14854f0866374a8fa18f2fd8f973b91a
Publikováno v:
Фізика і хімія твердого тіла, Vol 24, Iss 1, Pp 134-145 (2023)
This paper discusses the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in modern energy production. The advantages and disadvantages of using CdTe thin-film solar cells are analyzed, and arguments are presented in favor
Externí odkaz:
https://doaj.org/article/fc869c0ef62a4fe4ac42161351731b4c
Publikováno v:
Фізика і хімія твердого тіла, Vol 23, Iss 2, Pp 317-321 (2022)
The problems of developing light-emitting structures based on CdTe with an extended range of operating temperatures and radiation-resistant parameters are studied. A technique for obtaining heterostructures has been mastered, technological modes of i
Externí odkaz:
https://doaj.org/article/e61f52ad5a38499fbcbcb424acae4fad
Publikováno v:
Фізика і хімія твердого тіла, Vol 22, Iss 4, Pp 817-827 (2021)
An analysis of the use of semiconductor solar cells based on thin-film cadmium telluride (CdTe) in power engineering is carried out. It is shown that the advantages of thin-film technology and CdTe itself as a direct-gap semiconductor open up the pro
Externí odkaz:
https://doaj.org/article/d0bbe81fdbe84121b180e50605b6f638
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 232-237 (2020)
Описано методику отримання тонких шарів кадмій телурид p-типу провідності шляхом хімічного легування поверхні кристалів кадмій телури
Externí odkaz:
https://doaj.org/article/78810a1a3db544279a305e94677ce5af
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 1, Pp 52-56 (2020)
Досліджено оптичне поглинання, відбивання і люмінесценцію CdTe:Ca. Встановлено, що отримані леговані Ca поверхневі шари характеризуються і
Externí odkaz:
https://doaj.org/article/2e6a0b1f49ef4d11b6083626642302af
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 232-237 (2020)
The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium or lithium is described.The dependences of the electrical properties of the obtained films o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8599c04d4968669a3942c14240265d83
https://doi.org/10.15330/pcss.21.2.232-237
https://doi.org/10.15330/pcss.21.2.232-237
Publikováno v:
Physics and Chemistry of Solid State; Vol 21, No 1 (2020); 52-56
Фізика і хімія твердого тіла; Vol 21, No 1 (2020); 52-56
Фізика і хімія твердого тіла, Vol 21, Iss 1, Pp 52-56 (2020)
Фізика і хімія твердого тіла; Vol 21, No 1 (2020); 52-56
Фізика і хімія твердого тіла, Vol 21, Iss 1, Pp 52-56 (2020)
The optical absorption, reflection and luminescence of CdTe:Ca were studied. It was established that the obtained Ca doped surface layers are characterized by intense photoluminescence from 8-10% in the edge region. Radiation is formed due to interba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53527346980d91713e4fecaf7b897bb5
https://doi.org/10.15330/pcss.21.1.52-56
https://doi.org/10.15330/pcss.21.1.52-56
Autor:
O.M. Matkivskyi, O.B. Kostyuk, L.V. Turovska, V.V. Prokopiv, Bogdan Dzundza, T.M. Mazur, M.V. Deychakivskyi
Publikováno v:
Фізика і хімія твердого тіла. 20:372-375
The technique of obtaining thin layers of cadmium telluride of p-type conductivity by chemical doping of the surface of cadmium telluride crystals by calcium is described. The dependences of the electrical properties of the obtained films on the tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa01e1e0db5bb2d31b061cb39d54ccc
https://doi.org/10.15330/pcss.20.4.372-375
https://doi.org/10.15330/pcss.20.4.372-375
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 4, Pp 363-367 (2019)
A method for measuring the electrical conductivity and photoconductivity of semiconductor films with high electrical resistance is described. An electric circuit is presented and a computer program is developed. That provides automation of measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::099b53f9b417679c32575102c1246c18
https://doi.org/10.15330/pcss.19.4.363-367
https://doi.org/10.15330/pcss.19.4.363-367