Zobrazeno 1 - 10
of 49
pro vyhledávání: '"T.L. Meisenheimer"'
Autor:
Bruce L. Draper, Xusheng Wu, J.A. Felix, Michael L. Alles, K. J. Shetler, Jeffrey S. Kauppila, A. I. Silva, William Rice, S. Samavedam, T.L. Meisenheimer, Lloyd W. Massengill, M. Eller, Dennis R. Ball, T. D. Haeffner, En Xia Zhang, M. P. King, Marty R. Shaneyfelt
Publikováno v:
IEEE Transactions on Nuclear Science. 64:285-292
Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c99912be6e116d1722b22e0cd490939
https://doi.org/10.1109/tns.2016.2634538
https://doi.org/10.1109/tns.2016.2634538
Autor:
Ronald D. Schrimpf, J.R. Schwank, Evgeni Gusev, Marty R. Shaneyfelt, Daniel M. Fleetwood, J.A. Felix, T.L. Meisenheimer, Paul E. Dodd, C. D'Emic
Publikováno v:
IEEE Transactions on Nuclear Science. 50:1910-1918
We examine the total-dose radiation response of capacitors and transistors with stacked Al/sub 2/O/sub 3/ on oxynitride gate dielectrics with Al and poly-Si gates after irradiation with 10 keV X-rays. The midgap voltage shift increases monotonically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad1f91f1ba954dff45ed1e5b779258e4
https://doi.org/10.1109/tns.2003.820763
https://doi.org/10.1109/tns.2003.820763
Autor:
Daniel M. Fleetwood, T.L. Meisenheimer, Marty R. Shaneyfelt, J.R. Schwank, K. Vanhesden, Bruce L. Draper
Publikováno v:
Microelectronic Engineering. 59:253-258
Submicron nonvolatile memory transistors were fabricated by exposing silicon-on-insulator (SOI) buried oxides to hydrogen at elevated temperatures to generate mobile protons in the buried oxides. By switching the polarity of the bias to the SOI subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409a9fca54b81e4da8df5dee399bf559
https://doi.org/10.1016/s0167-9317(01)00636-0
https://doi.org/10.1016/s0167-9317(01)00636-0
Autor:
Steven C. Witczak, William L. Warren, P.S. Winokur, T.L. Meisenheimer, M.J. Johnson, Daniel M. Fleetwood
Publikováno v:
IEEE Transactions on Nuclear Science. 44:1810-1817
A large, delayed increase is observed in the postirradiation 1/f noise of Oki pMOS transistors prior to the onset of latent interface-trap buildup. Both effects are evidently due to similar thermally activated processes involving hydrogen. The increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3bcd694b8f0ebee501353d5ea75c22
https://doi.org/10.1109/23.658947
https://doi.org/10.1109/23.658947
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1940-1947
The effect of displacement and ionizing dose damage on ion-beam-induced-charge-collection (IBICC) and single-event-upset (SEU) imaging are explored. IBICC imaging is not affected by ionizing dose damage, and its dependence on displacement damage is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7851d0682ed1fd01ca22e2613a26647d
https://doi.org/10.1109/23.489238
https://doi.org/10.1109/23.489238
Autor:
J.R. Schwank, William L. Warren, Marty R. Shaneyfelt, T.L. Meisenheimer, Daniel M. Fleetwood, P.S. Winokur
Publikováno v:
Microelectronics Reliability. 35:403-428
We have performed an extensive study of the effects of border traps (near-interfacial oxide traps that can communicate with the underlying Si over a wide range of time scales) on the response of metal-oxide-semiconductor (MOS) devices to ionizing rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc53c2092590e91215d1c4ff27bd79cb
https://doi.org/10.1016/0026-2714(95)93068-l
https://doi.org/10.1016/0026-2714(95)93068-l
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2550-2559
Transistors and ICs were irradiated with or without pre-irradiation elevated-temperature biased stresses (i.e., burn-in). These stresses lead to larger radiation-induced transistor threshold-voltage shifts and increases in IC static power supply leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a77947ebc4e0f96dc6c78e87b249368f
https://doi.org/10.1109/23.340615
https://doi.org/10.1109/23.340615
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2536-2543
The radiation hardness of commercial floating gate 256 K E/sup 2/PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in EEPROM hardness were found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4588264b778aec5e4e2340d674dc81
https://doi.org/10.1109/23.340613
https://doi.org/10.1109/23.340613
Publikováno v:
IEEE Transactions on Nuclear Science. 41:538-548
This paper demonstrates use of the Qualified Manufacturers List (QML) methodology to qualify commercial and military microelectronics for use in space applications. QML "builds in" the hardness of the product through statistical process control (SPC)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4da6ed064656d477d2ce4f12c1cacfce
https://doi.org/10.1109/23.299796
https://doi.org/10.1109/23.299796
Publikováno v:
IEEE Transactions on Electron Devices. 41:1953-1964
An extensive comparison of the 1/f noise and radiation response of MOS devices is presented. Variations in the room-temperature 1/f noise of unirradiated transistors in the linear regime of device operation correlate strongly with variations in posti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dee8de70be4565b031305e1d0246ae3d
https://doi.org/10.1109/16.333811
https://doi.org/10.1109/16.333811