Zobrazeno 1 - 10
of 15
pro vyhledávání: '"T.L. McDevitt"'
Publikováno v:
Physical Review B. 45:6614-6622
Microstructures of lattice-matched ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$${\mathrm{As}}_{\mathit{y}}$${\mathrm{P}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$ epitaxial layers, grown on (001), (110), (111${)}_{\mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7445016d57a9382bb7ed0310f4f894df
https://doi.org/10.1103/physrevb.45.6614
https://doi.org/10.1103/physrevb.45.6614
Publikováno v:
1999 4th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.99TH8395).
The increase in ratio of wiring RC delay to the intrinsic transistor RC delay is motivating the IC industry to move from subtractive-aluminum to damascene-copper wiring. In addition to having 40% lower sheet resistance, damascene copper has significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d84156e5d521336e00354f9101a17bb9
https://doi.org/10.1109/ppid.1999.798841
https://doi.org/10.1109/ppid.1999.798841
Publikováno v:
IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168).
Historically, the semiconductor industry has made chip speed the focus of its high performance CMOS logic development strategy. For the wires and insulators used in the back-end-of-the-line (BEOL), this has driven the industry to use damascene tungst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b9706074f035c470ad768c7dccc07ae
https://doi.org/10.1109/asmc.1998.731585
https://doi.org/10.1109/asmc.1998.731585
Publikováno v:
MRS Proceedings. 198
The orientation dependence of phase separation has been examined in detail in InGaAsP layers grown by liquid phase epitaxy on (001), (110), (111)In and (123) InP substrates. It is shown that phase separation is two-dimensional in nature and does not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908b56eac42997edfba7f1425882dcbd
https://doi.org/10.1557/proc-198-609
https://doi.org/10.1557/proc-198-609
Autor:
M.A. Shahid, T.L. Mcdevitt, W.A. Bonner, F.S. Turco, V. G. Keramidas, M.C. Tamargo, David E. Laughlin, Subhash Mahajan
Microstructural characteristics of phase separated and ordered epitaxial layers of III-V compound semiconductors have been investigated by transmission electron microscopy. Phase separation is a common feature of InGaAs and InGaAsP layers grown by LP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0192a0dbc531f8383d9bf7cfe825551f
https://doi.org/10.1016/b978-0-444-88429-9.50022-7
https://doi.org/10.1016/b978-0-444-88429-9.50022-7
Publikováno v:
Scripta Metallurgica. 20:1305-1310
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ff2de4a0e82f1ffa48518a8cc6aa53
https://doi.org/10.1016/0036-9748(86)90054-2
https://doi.org/10.1016/0036-9748(86)90054-2
Autor:
W.A. Bonner, T.L. Mcdevitt, Tuviah E. Schlesinger, Subhash Mahajan, V. Stojanoff, M. A. Shahid
Publikováno v:
Materials Science and Engineering: B. 3:279-285
Homoepitaxial layers of undoped InP were grown by liquid phase epitaxy in a vertical system using different equilibration temperatures and supercooling. The quality of the as-grown epilayers was assessed by the Hall effect and photoluminescence (PL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6932e603a709d97b2a5da1921f2a01a5
https://doi.org/10.1016/0921-5107(89)90022-6
https://doi.org/10.1016/0921-5107(89)90022-6
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