Zobrazeno 1 - 10
of 13
pro vyhledávání: '"T.K. Nguyen-Duc"'
Autor:
Van-Quyen Dinh, T.K. Nguyen-Duc, Tung Nguyen-Duc, Quoc-Tuan Ta, Nam Nguyen, Xuan-Viet Dao, Thanh-Huy Pham
Publikováno v:
Microelectronics Reliability. 86:77-81
This work presents a simple and effective technique to decrease the driver temperature by filling the potting materials into space between driver and the interior wall of a LED bulb's heatsink. The thermal exchange between the LED bulb, including LED
Autor:
Seref Kalem, T.K. Nguyen-Duc, U. Gösele, Peter Werner, W. Erfurth, Manfred Reiche, P. Das Kanungo, Nadine Geyer, Horst Blumtritt, Nikolai Zakharov, A. Wolfsteller
Publikováno v:
Thin Solid Films. 518:2555-2561
Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these
Publikováno v:
Materials Science in Semiconductor Processing. 8:41-46
Structural and optical characterizations via reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy have been combined to investigate the kinetic formation of self-assembled Ge/Si hut clusters grown by
Autor:
Daniel Bouchier, F.A. d’Avitaya, J. Derrien, Vy Yam, V. Le Thanh, T.K. Nguyen-Duc, Philippe Boucaud, Lam H. Nguyen
Publikováno v:
Journal of Crystal Growth. 275:e1287-e1294
Structural and optical characterizations via reflection high-energy electron diffraction and atomic force microscopy have been combined to investigate the kinetic formation of self-assembled Ge/Si hut clusters grown at a substrate temperature of 525
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:471-475
Single and stacked layers of Ge/Si quantum dots were grown in SiO2 windows patterned by electron-beam lithography on oxidized Si (0 0 1) substrates. The growth of a silicon buffer layer prior to Ge deposition is found to be an additional parameter fo
Autor:
Hartmut S. Leipner, Johannes de Boor, T.K. Nguyen-Duc, Peter Werner, Zhipeng Huang, Ulrich Gösele, Silko Grimm, Manfred Dr. Reiche, Bodo Fuhrmann, Nadine Geyer
Publikováno v:
Nano letters. 9(9)
An effective and low-cost method to fabricate hexagonally patterned, vertically aligned Si/Ge superlattice nanowires with diameters below 20 nm is presented. By combining the growth of Si/Ge superlattices by molecular beam epitaxy, prepatterning the
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 2006, 132, pp.163-170
Journal de Physique IV Proceedings, 2006, 132, pp.163-170
Journal de Physique IV Proceedings, EDP Sciences, 2006, 132, pp.163-170
Journal de Physique IV Proceedings, 2006, 132, pp.163-170
The kinetic formation of self-assembled Ge/Si hut clusters grown by ultra-high vacuum chemical-vapour deposition has been investigated by means of reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc895f9e46f87006867023b9138bd23e
https://hal.archives-ouvertes.fr/hal-00068514
https://hal.archives-ouvertes.fr/hal-00068514
Autor:
J. Derrien, T.K. Nguyen-Duc, Philippe Boucaud, Vy Yam, Oliver G. Schmidt, V. Le Thanh, Daniel Bouchier
Publikováno v:
Thin Solid Films
Thin Solid Films, Elsevier, 2006, 508, pp.207-212
Thin Solid Films, 2006, 508, pp.207-212
Thin Solid Films, Elsevier, 2006, 508, pp.207-212
Thin Solid Films, 2006, 508, pp.207-212
The kinetic formation of self-assembled Ge/Si hut clusters grown by ultra-high vacuum chemical-vapor deposition has been investigated by means of reflection high-energy electron diffraction, atomic force microscopy and photoluminescence spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::350606813b5d51260f0c17e2f53dd95b
https://hal.archives-ouvertes.fr/hal-00110188
https://hal.archives-ouvertes.fr/hal-00110188
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