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pro vyhledávání: '"T.J.T. Kwan"'
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 45:918-924
We adapt a multicomb variance reduction technique used in neutral particle transport to Monte Carlo micro-electronic device modeling. We implement the method in a two-dimensional (2-D) MOSFET device simulator and demonstrate its effectiveness in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73bd9ceec00f2247a7f5b4b4b03bc3c7
https://doi.org/10.1109/16.662803
https://doi.org/10.1109/16.662803
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17:1230-1235
Three methods of variable-weight statistical enhancement for Monte Carlo semiconductor device simulation are compared. The steady-state statistical errors and figures of merit for implementations of the multicomb, cloning-rouletting, and splitting-ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc1bb2fd69858cc3c1e88d59286db66
https://doi.org/10.1109/43.736562
https://doi.org/10.1109/43.736562
Autor:
Lin Yin, Kevin J. Bowers, J.R. Smith, T.J.T. Kwan, Barbara Devolder, M.J. Berninger, R. Carlson, C. M. Snell
Publikováno v:
Proceedings of the 2005 Particle Accelerator Conference.
In this work, two-dimensional particle-in-cell simulations are used to examine the electron physics in the rod-pinch diode, a device that can be used to produce a relatively low-energy (a few MeV) radiographic electron source. It is found that with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53898142ec9e8f129243832428453e08
https://doi.org/10.1109/pac.2005.1590951
https://doi.org/10.1109/pac.2005.1590951
Autor:
Tai-Sen F. Wang, T.J.T. Kwan
Publikováno v:
Proceedings of the 2005 Particle Accelerator Conference.
The technical feasibility of an explosives detection system based on the nuclear resonance absorption (NRA) of gamma rays in nitrogen-rich materials was demonstrated at Los Alamos National Laboratory (LANL) in 1993 by using an RFQ proton accelerator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a4ba43814760e047545f911a4fea0ed
https://doi.org/10.1109/pac.2005.1590914
https://doi.org/10.1109/pac.2005.1590914
Publikováno v:
The 30th International Conference on Plasma Science, 2003. ICOPS 2003. IEEE Conference Record - Abstracts..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c93d5cc58c80bd381202ffb1e82f0cd2
https://doi.org/10.1109/plasma.2003.1229046
https://doi.org/10.1109/plasma.2003.1229046
Autor:
A.G. Sgro, T.J.T. Kwan
Publikováno v:
IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297).
Summary form only given. In multipulse radiography, electron beam pulses will encounter a background plasma consisting of low atomic weight elements such as water vapor and hydrocarbons, and also vaporized target material, generated by previous pulse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a342f662c782735817bc1a6c349963a
https://doi.org/10.1109/plasma.1999.829615
https://doi.org/10.1109/plasma.1999.829615
Publikováno v:
Proceedings of International Electron Devices Meeting.
Electron transport in the inversion layer of strained-silicon-channel n-MOSFETs is investigated using a Monte Carlo (MC) tool that takes into account the 2D nature of the electron gas. The subband structure is calculated using a bulk nonparabolic E-K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6144a63f422aa9b21119cd4eb94b53d4
https://doi.org/10.1109/iedm.1995.499330
https://doi.org/10.1109/iedm.1995.499330
Publikováno v:
Proceedings of the Eleventh Biennial University/Government/ Industry Microelectronics Symposium.
The physics of electron transport in pseudomorphically grown Si on relaxed [001] Si/sub 1-x/Ge/sub x/ is explored using an efficient fitted-band Monte Carlo (MC) simulator. The MC simulator is based on a multiband analytical model representing the fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6950b99b562a211ead42ecfaf8fcabea
https://doi.org/10.1109/ugim.1995.514139
https://doi.org/10.1109/ugim.1995.514139