Zobrazeno 1 - 10
of 24
pro vyhledávání: '"T.J. Bordelon"'
Autor:
L. J. Hung, Kelvin Doong, Sheng-Che Lin, T.J. Bordelon, Chien-Chih Liao, S.P.-S. Ho, Sunnys Hsieh, K.L. Young
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:169-179
This paper describes a common framework of test chip design for logic technology development and routine process monitoring, referred to as a field-configurable test structure array (FC-TSA), which can accommodate and test various types of test struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6936969c4bc93197f15433bb7f80cd45
https://doi.org/10.1109/tsm.2008.2000278
https://doi.org/10.1109/tsm.2008.2000278
Autor:
Choh-Fei Yeap, Al F. Tasch, Christine M. Maziar, T.J. Bordelon, X.L. Wang, D.B. Lemersal, V.M. Agostinelli, Khaled Hasnat
Publikováno v:
IEEE Transactions on Electron Devices. 41:1784-1795
Two-dimensional energy-dependent substrate current models are described for NMOS and PMOS devices that have been developed using a multi-contour approach. The new models offer a significant improvement in the calculation of substrate current due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb654384b95ee6c254ed9479ff2ffb9a
https://doi.org/10.1109/16.324589
https://doi.org/10.1109/16.324589
Publikováno v:
Solid-State Electronics. 35:131-139
This paper presents a non-parabolic formulation of the hydrodynamic model for Si device simulation. By adopting a first-order approach, non-parabolic band effects are included as simple corrections to the conventional hydrodynamic model. These correc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09e26ebe509ef25fffe188a721628af1
https://doi.org/10.1016/0038-1101(92)90052-e
https://doi.org/10.1016/0038-1101(92)90052-e
Publikováno v:
IEEE Transactions on Electron Devices. 39:1922-1927
A new MOS transistor structural approach (hot-carrier-induced MOSFET) capable of substantially suppressing adverse hot-carrier effects, while maintaining the other desired performance and manufacturability characteristics of deep-submicrometer MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d3700cb22b8dc3c3e24052f7bdf045
https://doi.org/10.1109/16.144685
https://doi.org/10.1109/16.144685
Publikováno v:
Solid-State Electronics. 34:617-628
The reduction in feature size of silicon devices has resulted in operating conditions characterized by extremely large internal electric fields and field gradients. The rapid spatial variation of the electric field precludes a point-wise (or local) d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c833d727ba7836a75c0a24c2b2a36b
https://doi.org/10.1016/0038-1101(91)90136-m
https://doi.org/10.1016/0038-1101(91)90136-m
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cdd11747c9aa0f40bd2cdd8c8acd60c
https://doi.org/10.1109/drc.1992.671855
https://doi.org/10.1109/drc.1992.671855
Autor:
A.F. Tasch, S. Jallepalli, Choh-Fei Yeap, V.M. Agostinelli, K. Hasnat, T.J. Bordelon, C.M. Maziar, X.L. Wang
Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.
Substrate current model based on the post-processing 1-D hydrodynamic model attached to drift-diffusion simulators has proven to be efficient and accurate for predicting substrate current for contemporary submicron MOSFETs. However, as devices shrink
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03193f642240f5e746ce11004c84c4bb
https://doi.org/10.1109/nupad.1994.343501
https://doi.org/10.1109/nupad.1994.343501
Publikováno v:
International Technical Digest on Electron Devices.
An nonparabolic formulation of the hydrodynamic model is presented which does not rely on the concept of an electron temperature. First-order nonparabolic effects are efficiently included through approximations corresponding to a scalar electron temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa272301aefdafd69506775f41440b7
https://doi.org/10.1109/iedm.1990.237158
https://doi.org/10.1109/iedm.1990.237158
Publikováno v:
IEEE Electron Device Letters. 13:554-556
A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f6b6bfc7eacf3bfb5d73d8f2cbbd2f0
https://doi.org/10.1109/55.192837
https://doi.org/10.1109/55.192837
Publikováno v:
IEEE Electron Device Letters. 11:517-519
Lightly doped drain (LDD) types of MOSFET structures have been analyzed in detail in order to understand the issues and trade-offs in the application of these structures to deep-submicrometer technology (L/sub gate/ >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8717b9b7c2593c52963d49cf15d02a41
https://doi.org/10.1109/55.63018
https://doi.org/10.1109/55.63018