Výsledky vyhledávání - "T.I M Bootsma"

The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the ${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$ Reconstruction

Autor: T.I M Bootsma, M. A. James, Chris Nicklin, T. Hibma, Paul B. Howes, John Emyr MacDonald, K.A. Edwards

Publikováno v: Surface Review and Letters. :163-166

The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d31442d35107b07f6afd0561168458c1
https://doi.org/10.1142/s0218625x98000311

Zobrazit plný text záznamu

The growth and atomic structure of the Si(111)7 × 7—Pb buried interface

Autor: M. A. James, T. Hibma, Paul B. Howes, John Emyr MacDonald, K.A. Edwards, T.I M Bootsma

Publikováno v: Physica B: Condensed Matter. 221:201-204

The formation of the buried, 7 × 7-reconstructed Si(111)—Pb interface has been studied by X-ray diffraction. Oscillations in the reflected intensity confirm that, at 100 K, the Pb grows layer-by-layer beyond a critical coverage of 6 ml. Measuremen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac140af452daa1e8a626f4cba880667c
https://doi.org/10.1016/0921-4526(95)00924-8

Zobrazit plný text záznamu

Observation of a structural transition during the low-temperature growth of the Si(111)7x7-Pb interface

Autor: P .B. Howes, T.I M Bootsma, M. A. James, John Emyr MacDonald, T. Hibma, K. A. Edwards

Publikováno v: Surface Science, 424(2-3), 169-178. ELSEVIER SCIENCE BV

The low-temperature Si(111)7 x 7-Pb interface has been investigated using surface X-ray diffraction. The Schottky barrier height of the Pb/Si diode is known to depend on the atomic reconstruction of the interface. We have studied the structure of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dc52cbf0ad9d4b857c03b173778aed1
https://hdl.handle.net/11370/7b226554-c6d0-44c0-a498-287430a29c80

Zobrazit plný text záznamu

The epitaxial growth of Cu on Si(111) 7x7: a RHEED study

Autor: T Hibma, T.I M Bootsma

Publikováno v: Surface Science, 331-333(Part A), 636-640. ELSEVIER SCIENCE BV

We investigated the morphological and structural changes that occur during the growth of Cu on Si(111)(7 × 7) at different substrate temperatures using reflection high energy electron diffraction (RHEED). For temperatures up to 100°C Cu grows in a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ca9fe42a7591a08eee77e809d8a40f1
https://research.rug.nl/en/publications/206e8962-7125-4ded-9b7b-709effb65231

Zobrazit plný text záznamu

Influence of interfacial atomic structure on the Schottky-barrier height of Si(111)-Pb

Autor: T.I M Bootsma, Paul B. Howes, T. Hibma, M. A. James, D. J. Hughes, K.A. Edwards, John Emyr MacDonald

Publikováno v: Physical Review B, 51(24), 17740-17743. AMER PHYSICAL SOC

The Schottky-barrier height for Si(111)-Pb diodes is known to depend on the initial reconstruction at monolayer coverages. While other studies have concentrated on the details of the initial stages of growth, we present evidence of structural differe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d33400c72ef8b24fa6b1b80e7adf04e
https://research.rug.nl/en/publications/b4bf449d-9f28-479d-b5df-9c27fe2032d8

Zobrazit plný text záznamu

A surface X-ray diffraction study of the Si(111)-P-buried interface

Autor: John Emyr MacDonald, K.A. Edwards, Paul B. Howes, D. J. Hughes, M. A. James, T. Hibma, T.I M Bootsma

Publikováno v: Surface Science, 331-333, 646-650. ELSEVIER SCIENCE BV

The absence of interdiffusion and chemical reaction at the Si(111)-Pb interface makes it an attractive prototypical system for studying metal-semiconductor interface formation. Of particular interest is the fact that the surface reconstruction in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8fdd79f76623e1f2a8c12c49691e2b0
https://hdl.handle.net/11370/115585fe-4595-4f2a-a545-94b01e7fb066

Zobrazit plný text záznamu

A strain-relieve transition in epitaxial growth of metals on Si(111)(7 × 7)

Autor: T.I M Bootsma, T. Hibma

Publikováno v: Surface Science, 127(1-4), 921-924. ELSEVIER SCIENCE BV

Pronounced RHEED specular beam intensity oscillations have been observed during the growth of several metals on a Si(111)(7×7) substrate at low temperature (100 K), showing that the metals grow in a layer-by-layer fashion. For all metals studied thr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bab2bd9a6d4eb6bdb6ff727ea3e2a3ce
https://doi.org/10.1016/0167-2584(93)90564-y

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání