Zobrazeno 1 - 10
of 18
pro vyhledávání: '"T.H. Sajeesh"'
Publikováno v:
Materials Research Bulletin. 47:3758-3763
Photothermal beam deflection technique is an efficient tool for non-destructive evaluation of thin films. Thin films of tin mono sulphide, which find application as absorber layer in photovoltaic cells, were deposited by chemical spray pyrolysis tech
Publikováno v:
physica status solidi (b). 250:95-102
The present work reports the influence of indium concentration and annealing temperature (100–400 °C) on the structural and optoelectronic properties of indium selenide thin films grown using a stack elemental layer technique. The concentration of
Role of pH of precursor solution in taming the material properties of spray pyrolysed SnS thin films
Publikováno v:
Applied Surface Science. 258:6870-6875
Samples were deposited using chemical spray pyrolysis technique by varying the pH of the starting precursor solution from 0.8 to 3.2. These samples were analyzed using X- ray diffraction, optical absorption spectroscopy, energy dispersive X-ray analy
Publikováno v:
physica status solidi (a). 209:1274-1278
The origin of various defect levels in the SnS thin films deposited using chemical spray pyrolysis (CSP) technique has been explored in this manuscript, by employing low-temperature photoluminescence (PL) technique. Concentration of Sn in the samples
Publikováno v:
Energy Procedia. 15:325-332
Role of pH of the precursor solution on structural, morphological, electrical and optical properties was investigated, for SnS films prepared using chemical spray pyrolysis (CSP) technique. From the study we could understand that optimum pH of the pr
Publikováno v:
physica status solidi (a). 207:1934-1939
Exploiting the potential of the material for the photovoltaic applications requires an extensive defect level analysis, mandatory. Photoluminescence (PL) technique was employed to probe the defect levels in p-SnS thin films deposited using chemical s
Publikováno v:
Thin Solid Films. 518:4370-4374
SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (> 105/cm) were deposited at substrate
Publikováno v:
Journal of Physics D: Applied Physics. 43:445102
Sn atoms were thermally diffused into tin (II) sulfide (SnS) films prepared using chemical spray pyrolysis. This was achieved by depositing a layer of Sn metal over SnS films followed by annealing of the Sn/SnS bilayer films at 100 °C in high vacuum
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