Zobrazeno 1 - 10
of 52
pro vyhledávání: '"T.G. van de Roer"'
Autor:
F Fouad Karouta, G.A. Acket, Manuela Buda, T.G. van de Roer, L.M.F. Kaufmann, E. Smalbrugge, E.J. Geluk
Publikováno v:
Journal of The Electrochemical Society. 145:1076-1079
Controlled anodic oxidation for achieving a better control of etch depth in AlGaAs semiconductor structures is studied. The rates of material consumption and oxide thickness growth for p ++ -GaAs and p-Al 0.38 Ga 0.89 As are given for the citric acid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49ae8e7654f6da6e37ecc70d2c14900
https://doi.org/10.1149/1.1838392
https://doi.org/10.1149/1.1838392
Autor:
T.G. van de Roer, Irina Veretennicoff, E. Smalbrugge, W.C. van der Vleuten, Hugo Thienpont, Jan Danckaert, R.C. Strijbos, B. S. Ryvkin, Guy Verschaffelt, F Fouad Karouta, Martinus Petrus Creusen, G.A. Acket
Publikováno v:
IEEE Photonics Technology Letters, 12(8), 945-947. Institute of Electrical and Electronics Engineers
Vrije Universiteit Brussel
Vrije Universiteit Brussel
We present experimental evidence that asymmetric current injection in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs) stabilizes the polarization of the emitted light. Anisotropies in the gain and loss mechanisms introduced by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a43f40c3f5eb2bb52865df674271d42
https://doi.org/10.1109/68.867969
https://doi.org/10.1109/68.867969
Autor:
H. P. Joosten, T.G. van de Roer, Daan Lenstra, J.J.M. Kwaspen, Mohamed Henini, H. J. M. F. Noteborn
Publikováno v:
Physica B: Physics of Condensed Matter, 175(1-3), 301-306. Elsevier
The influence of incoherent tunneling in double-barrier resonant-tunneling (DBRT) diodes, originating in carrier scattering, is investigated using a previously published model in which the device is divided into three regions (accumulation region, ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06002bf7857282b4efda77e1d94c39bf
https://research.tue.nl/en/publications/3b301d3f-6c20-419d-8be2-559599e97793
https://research.tue.nl/en/publications/3b301d3f-6c20-419d-8be2-559599e97793
Autor:
T.G. van de Roer, B.H. van Roy, F. de Bruyn, F Fouad Karouta, Martinus Petrus Creusen, W.C. van der Vleuten, E. Smalbrugge
Publikováno v:
Electrochemical and Solid-State Letters, 2(2), 83-85. Electrochemical Society, Inc.
A versatile sealing process for AlAs layers is presented. This sealing prevents the AlAs layers of AlAs/GaAs top distributed Bragg reflectors from further undesired oxidation during the wet oxidation of the AlAs current constriction layers in vertica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f699d2dd72cab410b13835d56730d70
https://doi.org/10.1149/1.1390742
https://doi.org/10.1149/1.1390742
Autor:
Pcm Christianen, V.I. Tolstikhin, Theo Rasing, A.P. de Boer, J.C. Maan, H.M. de Vrieze, T.G. van de Roer
Publikováno v:
Applied Physics Letters, 72, 2936-2938
Applied Physics Letters, 72, 23, pp. 2936-2938
Applied Physics Letters, 72(23), 2936-2938. American Institute of Physics
Applied Physics Letters, 72, 23, pp. 2936-2938
Applied Physics Letters, 72(23), 2936-2938. American Institute of Physics
It is shown that measurements of the effect of optical injection with an external laser on the spectral response of a semiconductor optical amplifier can probe intrinsic properties of a working device. The data demonstrate that under saturated gain c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b19ea5e2319d205161d0f6da7351fb7
https://doi.org/10.1063/1.121499
https://doi.org/10.1063/1.121499
Autor:
V.I. Tolstikhin, T.G. van de Roer, J.J.M. Kwaspen, Chennupati Jagadish, G.A. Acket, H.H. Tan, E. Smalbrugge, R.C.P. Hoskens
Publikováno v:
Commad '04 conference, Brisbane, Australia, 397-400
STARTPAGE=397;ENDPAGE=400;TITLE=Commad '04 conference, Brisbane, Australia
STARTPAGE=397;ENDPAGE=400;TITLE=Commad '04 conference, Brisbane, Australia
The novel hot electron injection laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3fe1c050404d667104eb0017a31e862
https://doi.org/10.1109/commad.2004.1577573
https://doi.org/10.1109/commad.2004.1577573
Autor:
G. Iordache, T.G. van de Roer, E. Smalbrugge, G.A. Acket, Manuela Buda, W.C. van der Vleuten, C.M. van Es, B.H. van Roy
Publikováno v:
CLEO/Europe Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634802579d8b93211aebf35b11c364a4
https://doi.org/10.1109/cleoe.1998.719030
https://doi.org/10.1109/cleoe.1998.719030
Autor:
R.C. Strijbos, LM Luc Augustin, Hugo Thienpont, Guy Verschaffelt, E. Smalbrugge, Kent D. Choquette, E.J. Geluk, F Fouad Karouta, T.G. van de Roer
Publikováno v:
Vrije Universiteit Brussel
IEEE Photonics Technology Letters, 16(3), 708-710. Institute of Electrical and Electronics Engineers
IEEE Photonics Technology Letters, 16(3), 708-710. Institute of Electrical and Electronics Engineers
We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intracavity contacted vertical-cavity surface-emitting lasers using two sets of p- and n-type contacts per device. When using the contacts ali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aed55d84d4bc63d9229e12b80edc6d6d
https://biblio.vub.ac.be/vubir/controlled-polarization-switching-in-vcsels-by-means-of-asymmetric-current-injection(d0b92722-f20f-4462-8d3b-afde06c75d41).html
https://biblio.vub.ac.be/vubir/controlled-polarization-switching-in-vcsels-by-means-of-asymmetric-current-injection(d0b92722-f20f-4462-8d3b-afde06c75d41).html
Publikováno v:
Applied Physics Letters, 67(10), 1343-1345. American Institute of Physics
Self‐pulsations are induced in broad area diode lasers by including an extra layer functioning as a saturable absorber. The absorption of this layer and its coupling to the photon field can be tuned via the layer thickness and its distance to the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c715ddb9484344e42c4843e2b387154c
https://doi.org/10.1063/1.115545
https://doi.org/10.1063/1.115545
An efficient Monte Carlo device simulation code based on rigorous application of internal scattering
Publikováno v:
Solid-State Electronics. 36:1579-1581
In Monte Carlo simulation of semiconductors[1,2] the most laborious part is the calculation of the transition probabilities as function of scattering angle and especially the inversion of these expressions. An obvious way to avoid this is to use look
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac77cf2cfcfb0fc12bd1f4a1946d13a
https://doi.org/10.1016/0038-1101(93)90030-t
https://doi.org/10.1016/0038-1101(93)90030-t