Zobrazeno 1 - 10
of 80
pro vyhledávání: '"T.G. Yugova"'
Autor:
Dmitry Roshchupkin, Yu. A. Agafonov, T.G. Yugova, V.I. Zinenko, V.S. Avrutin, V. I. Vdovin, Dmitry Irzhak, N.F. Izyumskaya, A.F. Vyatkin, E. A. Steinman
Publikováno v:
Semiconductors. 38:313-318
Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular-beam epitaxy were irradiated with 350-keV Ge+ ions at a temperature of 400°C so that the peak of the ions’ energy losses was located within the silicon substrate (deeper than the Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87107483b48ff59f44424a831d9dc48e
https://doi.org/10.1134/1.1682335
https://doi.org/10.1134/1.1682335
Autor:
T.G. Yugova, Dmitry Roshchupkin, V. I. Zinenko, Dmitry Irzhak, E. A. Steinman, N.F. Izyumskaya, A.F. Vyatkin, Yu. A. Agafonov, V.S. Avrutin, V. I. Vdovin
Publikováno v:
Materials Science and Engineering: B. 100:35-39
Pseudomorphic Si0.76Ge0.24/Si heterostructures grown by molecular beam epitaxy were implanted with Ge+ ions at 400 °C in such a way that an ion-damaged region was located below the SiGe/Si interface. The effect of Ge+-ion irradiation on strain-relax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e0325b6bd1c374af0f0bef621c6b113
https://doi.org/10.1016/s0921-5107(03)00070-9
https://doi.org/10.1016/s0921-5107(03)00070-9
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Physics: Condensed Matter. 14:13241-13246
The transformation of structural defects and photoluminescence (PL) spectra of n- and p-type Cz-Si after implantation with erbium ions at 1 MeV energy to doses of 1 × 1013 and 1 × 1014 cm−2 followed by annealing at 620–1100°C for 0.25–3.0 h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00994f0bb42fe7665096ee94a0b0f929
https://doi.org/10.1088/0953-8984/14/48/374
https://doi.org/10.1088/0953-8984/14/48/374
Autor:
Dmitry Roshchupkin, V.S. Avrutin, Dmitry Irzhak, V. I. Vdovin, A.F. Vyatkin, N.F. Izyumskaya, E. A. Steinman, T.G. Yugova, Yu. A. Agafonov, V. I. Zinenko
Publikováno v:
Materials Science and Engineering: B. 89:350-354
The effect of non-equilibrium point defects on strain relaxation in pseudomorphic Si 0.76 Ge 0.24 /Si heterostructures was studied by X-ray diffraction (XRD) and low-temperature photoluminescence (PL). The overcritical Si 0.76 Ge 0.24 layer was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced2df59599155238f0697434412f350
https://doi.org/10.1016/s0921-5107(01)00767-x
https://doi.org/10.1016/s0921-5107(01)00767-x
Publikováno v:
Semiconductor Science and Technology. 14:582-588
The dislocation structure and photoluminescence of partially relaxed Si1-xGex layers on Si(001) substrates were studied to reveal the contribution from dislocations localized in different regions of the heterostructure (SiGe layer, SiGe/Si interface,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0bf2318bc13195e60bde8a964c0fcac
https://doi.org/10.1088/0268-1242/14/6/316
https://doi.org/10.1088/0268-1242/14/6/316
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 147:116-121
Structural defects arising in Cz–Si wafers after implantation with high-energy ions of rare-earth elements (Er, Ho, Dy) and annealing in a chlorine-containing ambience were studied by transmission electron microscopy and chemical etching/Nomarski m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8135f899008f741a15ace2ab3fa26b9
https://doi.org/10.1016/s0168-583x(98)00564-3
https://doi.org/10.1016/s0168-583x(98)00564-3
Publikováno v:
Journal of Luminescence. 80:357-361
The behavior of luminescence spectra and structural defects in single crystal Czochralski silicon after erbium implantation at 1–1.8 MeV energies and 1×10 13 cm −2 dose with subsequent annealing at 1000–1200°C for 0.25–3 h in argon and a ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab06eef4b98c0fcd3369c2f6cf529ca4
https://doi.org/10.1016/s0022-2313(98)00129-x
https://doi.org/10.1016/s0022-2313(98)00129-x
Publikováno v:
Materials Science Forum. :1521-1526
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f9a82896cd9d3a1938248580ca6712
https://doi.org/10.4028/www.scientific.net/msf.258-263.1521
https://doi.org/10.4028/www.scientific.net/msf.258-263.1521