Zobrazeno 1 - 10
of 19
pro vyhledávání: '"T.F. Ou"'
Publikováno v:
Neurología (English Edition), Vol 39, Iss 4, Pp 321-328 (2024)
Introduction: The aim of this study was to compare the effect of five types of PEGlated nanoliposomes (PNLs) on α-synuclein (α-syn) fibrillization, attenuation of microglial activation, and silence of the SNCA gene, which encodes α-syn. Methods: T
Externí odkaz:
https://doaj.org/article/ef6e3b391760404891bc11e6e11c528f
Autor:
H. Ouyang, Chien-Sheng Su, Hariharan Santosh, Nhan Do, Anh Ly, Jeng-Wei Yang, Tiwari Vipin, Thuan Vu, Man-Tang Wu, Y. J. Sheng, Mandana Tadayoni, Hieu Van Tran, C.H. Chen, Hong Stanley, H. Liang, T.F. Ou, C.C. Shih, J. Norman
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
This paper discusses the performance and reliability of the third generation split-gate flash memory cell (ESF3) successfully embedded in a high performance and low power 28 nm logic process technology. The scaling of the 1.05V select transistor is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81fea5abe31c7c6ffb923e46c3e41e03
https://doi.org/10.1109/imw.2018.8388848
https://doi.org/10.1109/imw.2018.8388848
Autor:
W.P. Lu, M. S. Chen, S W Huang, G D Lee, S.H. Ku, Chih-Yuan Lu, C H Tsai, N K Zous, W C Tzeng, Kuang-Chao Chen, K W Liu, T.F. Ou, C H Liu
Publikováno v:
IEEE Electron Device Letters. 32:734-736
A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03b1616fb51236a726c45e1d30651f76
https://doi.org/10.1109/led.2011.2134064
https://doi.org/10.1109/led.2011.2134064
Autor:
Tao-Cheng Lu, Chun-Jung Tang, Tahui Wang, C.W. Li, Yao-Wen Chang, T.F. Ou, Chih-Yuan Lu, Kuang-Chao Chen, Wen-Jer Tsai, Chih Hsiung Lee
Publikováno v:
IEEE Electron Device Letters. 30:165-167
We propose a new hot-electron programming method with a low drain-to-source voltage in a buried-diffusion (BD) bit-line SONOS memory array. In this method, channel electrons are preaccelerated in a cell preceding a program cell. For a small bit-line
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca93303edf2eebee6ca93696b83809f4
https://doi.org/10.1109/led.2008.2009773
https://doi.org/10.1109/led.2008.2009773
Autor:
T.F. Ou, T.C. Lu, Tzung-Ting Han, C.H. Cheng, Kuang-Chao Chen, K.F. Chen, Chun-Yuan Lu, Chih-Yuan Lu, Tahui Wang, J.S. Huang, Wen-Jer Tsai
Publikováno v:
2008 IEEE International Electron Devices Meeting.
A novel bias scheme is proposed for non-volatile memory cells arranged in a virtual-ground array that utilizes hot-carrier injections for program and erase operations. By taking two adjacent cells on the same wordline as a unit, and letting the commo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7b99938c25cfa5427bf8cd0cfa5520
https://doi.org/10.1109/iedm.2008.4796822
https://doi.org/10.1109/iedm.2008.4796822
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
Bit interference effects in an ultra-thin body, double-gate, trapped-charge-storage type non-volatile memory cell are investigated through two-dimensional device simulations. Though such device is more scalable and has a larger current drive, it is f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883a1ea070969f9ead058a220c014b2e
https://doi.org/10.1109/relphy.2008.4558994
https://doi.org/10.1109/relphy.2008.4558994
Autor:
J. Ku, WenChin Ting, Hsuan-Ling Kao, Y.Y. Liao, W.J. Tsai, Tahui Wang, T.C. Lu, C.C. Yeh, T.F. Ou, Chih-Yuan Lu
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767c15741c3bb179061562fe3bf5f8bf
https://doi.org/10.1109/.2006.1629502
https://doi.org/10.1109/.2006.1629502
Autor:
Tahui Wang, T.F. Ou, Y.Y. Liao, K.M. Pan, Chih-Yuan Lu, Y.R. Chen, Hsuan-Ling Kao, C.C. Yeh, Wenchi Ting, Wen-Jer Tsai, J. Ku, S.H. Gu, N.K. Zous, T.C. Lu
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
A novel silicon-nitride based light-emitting transistor (SiNLET) is proposed for the first time. This three-terminal electroluminescence device uses a SONOS-type device structure, and its process is compatible to standard CMOS devices. Photons are ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cae385391416443be91d9660e553d5
https://doi.org/10.1109/iedm.2005.1609535
https://doi.org/10.1109/iedm.2005.1609535
Autor:
Y.h. Ku, Hsuan-Ling Kao, Tahui Wang, E.k. Lai, Wen-Jer Tsai, Yi-Te Shih, Yu-Jen Chen, T.F. Ou, Tao-Cheng Lu, Chih-Yuan Lu, Wenchi Ting, Ming-Shiang Chen, Y.Y. Liao, Chih-Ting Yeh
Publikováno v:
2006 IEEE International Reliability Physics Symposium Proceedings.
The stress effect on the ONO stack layer in a two-bit SONOS-type memory cell is investigated. Our results show that P/E cycles induced stress will generate extra nitride oxide, and interface traps in the ONO stack layer. Besides, these stress created
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4800a709a3c395f6c41b6609981df3
https://doi.org/10.1109/relphy.2006.251327
https://doi.org/10.1109/relphy.2006.251327
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